Anisotropic carrier transport properties in layered cobaltate epitaxial films grown by reactive solid-phase epitaxy

Kenji Sugiura; Hiromichi Ohta; Shin Ichi Nakagawa; Rong Huang; Yuichi Ikuhara; Kenji Nomura; Hideo Hosono; Kunihito Koumoto

doi:10.1063/1.3119631

Anisotropic carrier transport properties in layered cobaltate epitaxial films grown by reactive solid-phase epitaxy

Kenji Sugiura, Hiromichi Ohta, Shin Ichi Nakagawa, Rong Huang, Yuichi Ikuhara, Kenji Nomura, Hideo Hosono, Kunihito Koumoto

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

Herein we report the anisotropic carrier transport properties of a layered cobaltate, Nax CoO2 epitaxial film grown on the m -plane of an α -Al2 O3 substrate using reactive solid-phase epitaxy. Scanning and transmission electron microscopy analyses revealed that Nax CoO2 was heteroepitaxially grown with the CoO2 conducting planes inclined by ∼43° against the α -Al2 O3 substrate surface. The electrical resistivity parallel to the CoO2 planes was ∼1/5 of the perpendicular one, but the parallel Seebeck coefficient was about twice as large as the perpendicular one. Hence, a higher thermoelectric efficiency in the cobaltates can be obtained within the CoO2 planes.

Original language	English
Article number	152105
Journal	Applied Physics Letters
Volume	94
Issue number	15
DOIs	https://doi.org/10.1063/1.3119631
Publication status	Published - 2009

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3119631

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Anisotropic carrier transport properties in layered cobaltate epitaxial films grown by reactive solid-phase epitaxy. / Sugiura, Kenji; Ohta, Hiromichi; Nakagawa, Shin Ichi; Huang, Rong; Ikuhara, Yuichi; Nomura, Kenji; Hosono, Hideo; Koumoto, Kunihito.

In: Applied Physics Letters, Vol. 94, No. 15, 152105, 2009.

Research output: Contribution to journal › Article › peer-review

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AU - Sugiura, Kenji

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AU - Huang, Rong

AU - Ikuhara, Yuichi

AU - Nomura, Kenji

AU - Hosono, Hideo

AU - Koumoto, Kunihito

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N2 - Herein we report the anisotropic carrier transport properties of a layered cobaltate, Nax CoO2 epitaxial film grown on the m -plane of an α -Al2 O3 substrate using reactive solid-phase epitaxy. Scanning and transmission electron microscopy analyses revealed that Nax CoO2 was heteroepitaxially grown with the CoO2 conducting planes inclined by ∼43° against the α -Al2 O3 substrate surface. The electrical resistivity parallel to the CoO2 planes was ∼1/5 of the perpendicular one, but the parallel Seebeck coefficient was about twice as large as the perpendicular one. Hence, a higher thermoelectric efficiency in the cobaltates can be obtained within the CoO2 planes.

AB - Herein we report the anisotropic carrier transport properties of a layered cobaltate, Nax CoO2 epitaxial film grown on the m -plane of an α -Al2 O3 substrate using reactive solid-phase epitaxy. Scanning and transmission electron microscopy analyses revealed that Nax CoO2 was heteroepitaxially grown with the CoO2 conducting planes inclined by ∼43° against the α -Al2 O3 substrate surface. The electrical resistivity parallel to the CoO2 planes was ∼1/5 of the perpendicular one, but the parallel Seebeck coefficient was about twice as large as the perpendicular one. Hence, a higher thermoelectric efficiency in the cobaltates can be obtained within the CoO2 planes.

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Anisotropic carrier transport properties in layered cobaltate epitaxial films grown by reactive solid-phase epitaxy

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