The Nb/Nb0.5Zr0.5-multilayer shows an upturn feature in the parallel upper critical field Hc2|(T), caused by the shift of order-parameter from Nb- to NbZr-layers. In this work, the temperature dependence of the slope dHc2/dΘ near the field direction parallel to film is investigated in the region where the upturn occurs. This result is nearly in agreement with theoretical calculation, assuming the discontinuous periodic distribution of electron diffusion constant. Similar feature is found in Nb/Nb0.7Zr0.3 multilayers.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering