Angular dependence of lateral growth rate on the InP (1 1 1)A,B surface by liquid-phase epitaxy

Yutaka Oyama, Toshio Kochiya, Ken Suto, Jun Ichi Nishizawa

Research output: Contribution to journalArticlepeer-review

Abstract

The angular dependences of the lateral growth rate are determined as a function of growth temperature in liquid-phase epitaxy (LPE) of (1 1 1)A,B InP at Tg = 450-490°C. From the observations of the deformation of artificially made tables after epitaxy, the lateral growth rate has shown a maximum in the 〈 1 1 2 〉 direction steps on (1 1 1)B at Tg = 450°C. This indicated that the kink density was high in the 〈 1 1 2 〉 direction on the InP (1 1 1)B surface. It is also shown that the anisotropy of lateral growth rate decreases as the growth temperature becomes high on (1 1 1)B. And isotropic lateral growth rate was observed on the (1 1 1) A surface at Tg = 450°C. From these results, the kink-step structures during LPE on the {1 1 1} InP surface were discussed.

Original languageEnglish
Pages (from-to)41-48
Number of pages8
JournalJournal of Crystal Growth
Volume258
Issue number1-2
DOIs
Publication statusPublished - 2003 Oct 1

Keywords

  • A1. Crystal morphology
  • A1. Growth models
  • A1. Surface structure
  • A3. Liquid phase epitaxy
  • B1. Phosphide
  • B2. Semiconducting indium phosphide

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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