TY - JOUR
T1 - Angular dependence of lateral growth rate and kink-step structure on InP surface during liquid phase epitaxial condition
AU - Oyama, Yutaka
AU - Kochiya, Toshio
AU - Suto, Ken
AU - Nishizawa, Jun Ichi
N1 - Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.
PY - 2005/2/15
Y1 - 2005/2/15
N2 - The angular dependence of lateral growth rate as a function of growth temperature (Tg) was determined for the liquid-phase epitaxy (LPE) of (0 0 1), (1 1 1)A,B and (1 1 0) InP. From the observation of post-growth variations of pre-formed mesa structures on InP (0 0 1) surface, it is shown that lateral growth rate was maximum parallel to [1 1 0] direction step at Tg<400°C. It is indicated that kink density was the highest parallel to [1 1 0] direction on InP (0 0 1) surface. On (1 1 1)B surfaces, maximum lateral growth rate occurred at Tg=450°C in the 〈112〉 directions. This implies that the kink-step density was the highest in these directions. However, at Tg=450°C, lateral growth rate shows isotropic tendencies on (1 1 1)A surfaces, and the anisotropy decreases as the growth temperature increases. On (1 1 0) surfaces, lateral growth was observed near the 〈110〉 direction steps; however, lateral growth rate was extremely small near the 〈100〉 direction steps.
AB - The angular dependence of lateral growth rate as a function of growth temperature (Tg) was determined for the liquid-phase epitaxy (LPE) of (0 0 1), (1 1 1)A,B and (1 1 0) InP. From the observation of post-growth variations of pre-formed mesa structures on InP (0 0 1) surface, it is shown that lateral growth rate was maximum parallel to [1 1 0] direction step at Tg<400°C. It is indicated that kink density was the highest parallel to [1 1 0] direction on InP (0 0 1) surface. On (1 1 1)B surfaces, maximum lateral growth rate occurred at Tg=450°C in the 〈112〉 directions. This implies that the kink-step density was the highest in these directions. However, at Tg=450°C, lateral growth rate shows isotropic tendencies on (1 1 1)A surfaces, and the anisotropy decreases as the growth temperature increases. On (1 1 0) surfaces, lateral growth was observed near the 〈110〉 direction steps; however, lateral growth rate was extremely small near the 〈100〉 direction steps.
KW - A1. Crystal morphologies
KW - A1. Growth models
KW - A1. Surface structure
KW - A3. Liquid-phase epitaxy
KW - B1. Phosphides
KW - B2. Semiconducting III-V materials
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U2 - 10.1016/j.jcrysgro.2004.10.144
DO - 10.1016/j.jcrysgro.2004.10.144
M3 - Conference article
AN - SCOPUS:15844363844
VL - 275
SP - e97-e101
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 1-2
ER -