Angular dependence of lateral growth rate and kink-step structure on InP surface during liquid phase epitaxial condition

Yutaka Oyama, Toshio Kochiya, Ken Suto, Jun Ichi Nishizawa

Research output: Contribution to journalConference article

2 Citations (Scopus)

Abstract

The angular dependence of lateral growth rate as a function of growth temperature (Tg) was determined for the liquid-phase epitaxy (LPE) of (0 0 1), (1 1 1)A,B and (1 1 0) InP. From the observation of post-growth variations of pre-formed mesa structures on InP (0 0 1) surface, it is shown that lateral growth rate was maximum parallel to [1 1 0] direction step at Tg<400°C. It is indicated that kink density was the highest parallel to [1 1 0] direction on InP (0 0 1) surface. On (1 1 1)B surfaces, maximum lateral growth rate occurred at Tg=450°C in the 〈112〉 directions. This implies that the kink-step density was the highest in these directions. However, at Tg=450°C, lateral growth rate shows isotropic tendencies on (1 1 1)A surfaces, and the anisotropy decreases as the growth temperature increases. On (1 1 0) surfaces, lateral growth was observed near the 〈110〉 direction steps; however, lateral growth rate was extremely small near the 〈100〉 direction steps.

Original languageEnglish
Pages (from-to)e97-e101
JournalJournal of Crystal Growth
Volume275
Issue number1-2
DOIs
Publication statusPublished - 2005 Feb 15

Keywords

  • A1. Crystal morphologies
  • A1. Growth models
  • A1. Surface structure
  • A3. Liquid-phase epitaxy
  • B1. Phosphides
  • B2. Semiconducting III-V materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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