Abstract
It was found by applying maximum entropy concept to angle-resolved Si 2p and N 1s photoelectron spectra that the distribution of nitrogen atoms and their bonding configurations in oxynitride films formed by nitridation of silicon oxide in nitrogen plasma followed by annealing is quite different from those in oxynitride films formed by nitridation of silicon oxide in NO ambient. Here, the nearest neighbors of silicon and nitrogen atoms determined from the deconvolution of Si 2p and N 1s spectra were considered.
Original language | English |
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Pages (from-to) | 98-101 |
Number of pages | 4 |
Journal | Microelectronic Engineering |
Volume | 80 |
Issue number | SUPPL. |
DOIs | |
Publication status | Published - 2005 Jun 17 |
Externally published | Yes |
Event | 14th Biennial Conference on Insulating Films on Semiconductors - Duration: 2005 Jun 22 → 2005 Jun 24 |
Keywords
- Chemical bonds
- Composition
- Depth profile
- Oxynitride
- XPS
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering