Angle-resolved XPS study on chemical bonds in ultrathin silicon oxynitride films

S. Shinagawa, H. Nohira, T. Ikuta, M. Hori, M. Kase, T. Hattori

Research output: Contribution to journalConference articlepeer-review

23 Citations (Scopus)

Abstract

It was found by applying maximum entropy concept to angle-resolved Si 2p and N 1s photoelectron spectra that the distribution of nitrogen atoms and their bonding configurations in oxynitride films formed by nitridation of silicon oxide in nitrogen plasma followed by annealing is quite different from those in oxynitride films formed by nitridation of silicon oxide in NO ambient. Here, the nearest neighbors of silicon and nitrogen atoms determined from the deconvolution of Si 2p and N 1s spectra were considered.

Original languageEnglish
Pages (from-to)98-101
Number of pages4
JournalMicroelectronic Engineering
Volume80
Issue numberSUPPL.
DOIs
Publication statusPublished - 2005 Jun 17
Externally publishedYes
Event14th Biennial Conference on Insulating Films on Semiconductors -
Duration: 2005 Jun 222005 Jun 24

Keywords

  • Chemical bonds
  • Composition
  • Depth profile
  • Oxynitride
  • XPS

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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