Angle-resolved XPS study on chemical bonds in ultrathin silicon oxynitride films

S. Shinagawa, H. Nohira, T. Ikuta, M. Hori, M. Kase, T. Hattori

    Research output: Contribution to journalConference articlepeer-review

    21 Citations (Scopus)

    Abstract

    It was found by applying maximum entropy concept to angle-resolved Si 2p and N 1s photoelectron spectra that the distribution of nitrogen atoms and their bonding configurations in oxynitride films formed by nitridation of silicon oxide in nitrogen plasma followed by annealing is quite different from those in oxynitride films formed by nitridation of silicon oxide in NO ambient. Here, the nearest neighbors of silicon and nitrogen atoms determined from the deconvolution of Si 2p and N 1s spectra were considered.

    Original languageEnglish
    Pages (from-to)98-101
    Number of pages4
    JournalMicroelectronic Engineering
    Volume80
    Issue numberSUPPL.
    DOIs
    Publication statusPublished - 2005 Jun 17
    Event14th Biennial Conference on Insulating Films on Semiconductors -
    Duration: 2005 Jun 222005 Jun 24

    Keywords

    • Chemical bonds
    • Composition
    • Depth profile
    • Oxynitride
    • XPS

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Atomic and Molecular Physics, and Optics
    • Condensed Matter Physics
    • Surfaces, Coatings and Films
    • Electrical and Electronic Engineering

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