Angle-resolved XPS study on chemical bonds in ultrathin silicon oxynitride films

S. Shinagawa; H. Nohira; T. Ikuta; M. Hori; M. Kase; T. Hattori

doi:10.1016/j.mee.2005.04.049

Angle-resolved XPS study on chemical bonds in ultrathin silicon oxynitride films

S. Shinagawa, H. Nohira, T. Ikuta, M. Hori, M. Kase, T. Hattori

Research output: Contribution to journal › Conference article › peer-review

21 Citations (Scopus)

Abstract

It was found by applying maximum entropy concept to angle-resolved Si 2p and N 1s photoelectron spectra that the distribution of nitrogen atoms and their bonding configurations in oxynitride films formed by nitridation of silicon oxide in nitrogen plasma followed by annealing is quite different from those in oxynitride films formed by nitridation of silicon oxide in NO ambient. Here, the nearest neighbors of silicon and nitrogen atoms determined from the deconvolution of Si 2p and N 1s spectra were considered.

Original language	English
Pages (from-to)	98-101
Number of pages	4
Journal	Microelectronic Engineering
Volume	80
Issue number	SUPPL.
DOIs	https://doi.org/10.1016/j.mee.2005.04.049
Publication status	Published - 2005 Jun 17
Event	14th Biennial Conference on Insulating Films on Semiconductors - Duration: 2005 Jun 22 → 2005 Jun 24

Keywords

Chemical bonds
Composition
Depth profile
Oxynitride
XPS

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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title = "Angle-resolved XPS study on chemical bonds in ultrathin silicon oxynitride films",

abstract = "It was found by applying maximum entropy concept to angle-resolved Si 2p and N 1s photoelectron spectra that the distribution of nitrogen atoms and their bonding configurations in oxynitride films formed by nitridation of silicon oxide in nitrogen plasma followed by annealing is quite different from those in oxynitride films formed by nitridation of silicon oxide in NO ambient. Here, the nearest neighbors of silicon and nitrogen atoms determined from the deconvolution of Si 2p and N 1s spectra were considered.",

keywords = "Chemical bonds, Composition, Depth profile, Oxynitride, XPS",

author = "S. Shinagawa and H. Nohira and T. Ikuta and M. Hori and M. Kase and T. Hattori",

note = "Funding Information: This research was conducted as a program for the {"}Promotion of Leading Researches{"} in Special Coordination Funds for Promoting Science and Technology by Ministry of Education, Culture, Sports, Science and Technology.; 14th Biennial Conference on Insulating Films on Semiconductors ; Conference date: 22-06-2005 Through 24-06-2005",

year = "2005",

month = jun,

day = "17",

doi = "10.1016/j.mee.2005.04.049",

language = "English",

volume = "80",

pages = "98--101",

journal = "Microelectronic Engineering",

issn = "0167-9317",

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T1 - Angle-resolved XPS study on chemical bonds in ultrathin silicon oxynitride films

AU - Shinagawa, S.

AU - Nohira, H.

AU - Ikuta, T.

AU - Hori, M.

AU - Kase, M.

AU - Hattori, T.

N1 - Funding Information: This research was conducted as a program for the "Promotion of Leading Researches" in Special Coordination Funds for Promoting Science and Technology by Ministry of Education, Culture, Sports, Science and Technology.

PY - 2005/6/17

Y1 - 2005/6/17

N2 - It was found by applying maximum entropy concept to angle-resolved Si 2p and N 1s photoelectron spectra that the distribution of nitrogen atoms and their bonding configurations in oxynitride films formed by nitridation of silicon oxide in nitrogen plasma followed by annealing is quite different from those in oxynitride films formed by nitridation of silicon oxide in NO ambient. Here, the nearest neighbors of silicon and nitrogen atoms determined from the deconvolution of Si 2p and N 1s spectra were considered.

AB - It was found by applying maximum entropy concept to angle-resolved Si 2p and N 1s photoelectron spectra that the distribution of nitrogen atoms and their bonding configurations in oxynitride films formed by nitridation of silicon oxide in nitrogen plasma followed by annealing is quite different from those in oxynitride films formed by nitridation of silicon oxide in NO ambient. Here, the nearest neighbors of silicon and nitrogen atoms determined from the deconvolution of Si 2p and N 1s spectra were considered.

KW - Chemical bonds

KW - Composition

KW - Depth profile

KW - Oxynitride

KW - XPS

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U2 - 10.1016/j.mee.2005.04.049

DO - 10.1016/j.mee.2005.04.049

M3 - Conference article

AN - SCOPUS:19944362863

VL - 80

SP - 98

EP - 101

JO - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

IS - SUPPL.

T2 - 14th Biennial Conference on Insulating Films on Semiconductors

Y2 - 22 June 2005 through 24 June 2005

ER -