Angle-resolved XPS studies on transition layers at SiO2/Si interfaces

T. Hattori, K. Azuma, Y. Nakata, H. Nohira, H. Okamoto, E. Ikenaga, K. Kobayashi, Y. Takata, S. Shin

    Research output: Contribution to journalArticlepeer-review

    4 Citations (Scopus)

    Abstract

    Using the high-brilliance synchrotron radiation at super photon ring 8 (SPring-8) we determined the electron escape depths in approximately 1-nm-thick low-temperature oxide layers, which were formed on Si(1 1 1) at 300 °C using three kinds of atomic oxygen, and that in approximately 1-nm-thick thermally grown oxide layer formed in 1 Torr dry oxygen at 900°C by measuring Si 2p photoelectron spectra at the photon energy of 1050 eV. The results indicated that the electron escape depths in the three kinds of low-temperature oxide layers were 13-21% smaller than that in the thermally grown oxide layer. Furthermore, the electron escape depth in the thermally grown oxide layer, whose thickness was close to that of the structural transition layer, was 19% smaller than that in bulk SiO2.

    Original languageEnglish
    Pages (from-to)457-460
    Number of pages4
    JournalJournal of Electron Spectroscopy and Related Phenomena
    Volume144-147
    DOIs
    Publication statusPublished - 2005 Jun

    Keywords

    • Atomic oxygen
    • Electron escape depth
    • Oxidation process
    • XPS

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Radiation
    • Atomic and Molecular Physics, and Optics
    • Condensed Matter Physics
    • Spectroscopy
    • Physical and Theoretical Chemistry

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