TY - JOUR
T1 - Angle-resolved XPS studies on transition layers at SiO2/Si interfaces
AU - Hattori, T.
AU - Azuma, K.
AU - Nakata, Y.
AU - Nohira, H.
AU - Okamoto, H.
AU - Ikenaga, E.
AU - Kobayashi, K.
AU - Takata, Y.
AU - Shin, S.
N1 - Funding Information:
The synchrotron radiation experiments were performed at SPring-8 with the invaluable support by Y. Tamenori the approval of Japan Synchrotron Radiation Research Institute as a Nanotechnology Support Project of The Ministry of Education, Culture, Sports, Science and Technology. This work was partially supported by the Ministry of Education, Science, Sports and Culture through a Grant-in-Aid for Scientific Research (A) (No. 32678), and partially by the Ministry of Economy, Trade and Industry and the New Energy and Industrial Technology Development.
PY - 2005/6
Y1 - 2005/6
N2 - Using the high-brilliance synchrotron radiation at super photon ring 8 (SPring-8) we determined the electron escape depths in approximately 1-nm-thick low-temperature oxide layers, which were formed on Si(1 1 1) at 300 °C using three kinds of atomic oxygen, and that in approximately 1-nm-thick thermally grown oxide layer formed in 1 Torr dry oxygen at 900°C by measuring Si 2p photoelectron spectra at the photon energy of 1050 eV. The results indicated that the electron escape depths in the three kinds of low-temperature oxide layers were 13-21% smaller than that in the thermally grown oxide layer. Furthermore, the electron escape depth in the thermally grown oxide layer, whose thickness was close to that of the structural transition layer, was 19% smaller than that in bulk SiO2.
AB - Using the high-brilliance synchrotron radiation at super photon ring 8 (SPring-8) we determined the electron escape depths in approximately 1-nm-thick low-temperature oxide layers, which were formed on Si(1 1 1) at 300 °C using three kinds of atomic oxygen, and that in approximately 1-nm-thick thermally grown oxide layer formed in 1 Torr dry oxygen at 900°C by measuring Si 2p photoelectron spectra at the photon energy of 1050 eV. The results indicated that the electron escape depths in the three kinds of low-temperature oxide layers were 13-21% smaller than that in the thermally grown oxide layer. Furthermore, the electron escape depth in the thermally grown oxide layer, whose thickness was close to that of the structural transition layer, was 19% smaller than that in bulk SiO2.
KW - Atomic oxygen
KW - Electron escape depth
KW - Oxidation process
KW - XPS
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U2 - 10.1016/j.elspec.2005.01.221
DO - 10.1016/j.elspec.2005.01.221
M3 - Article
AN - SCOPUS:17444427137
VL - 144-147
SP - 457
EP - 460
JO - Journal of Electron Spectroscopy and Related Phenomena
JF - Journal of Electron Spectroscopy and Related Phenomena
SN - 0368-2048
ER -