Angle-resolved photoemission study of CoSi2 nanofilms grown on Si(111) substrates

Hiroyuki Sasaki, Akinori Tanaka, Yosuke Kuriyama, Tazumi Nagasawa, Yuitsu Takeda, Shoji Suzuki, Shigeru Sato, Toshiro Nagase

Research output: Contribution to journalArticle

Abstract

We have carried out an angle-resolved photoemission study for CoSi 2 nanofilms grown on the Si(111)-7×7 substrates. The surface of CoSi2(111) nanofilm changes from the bulk-truncated surface to the surface with additional Si-bilayer by annealing at higher temperature above 825 K. The angle-resolved photoemission spectra of the CoSi2 nanofilm annealed at 853 K show the spectral features originated from the surface resonance state on the CoSi2 surface terminated by Si-bilayer. From the detailed photoemission study, we discuss the surface electronic structure in CoSi2(111) nanofilms grown on Si(111) substrates.

Original languageEnglish
Pages (from-to)91-95
Number of pages5
JournalSolid State Communications
Volume129
Issue number2
DOIs
Publication statusPublished - 2004 Jan 1

Keywords

  • A. Metal-semiconductor thin film structures
  • A. Silicides
  • B. Molecular beam epitaxy
  • E. Angle-resolved photoemission spectroscopies

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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  • Cite this

    Sasaki, H., Tanaka, A., Kuriyama, Y., Nagasawa, T., Takeda, Y., Suzuki, S., Sato, S., & Nagase, T. (2004). Angle-resolved photoemission study of CoSi2 nanofilms grown on Si(111) substrates. Solid State Communications, 129(2), 91-95. https://doi.org/10.1016/j.ssc.2003.09.023