We have carried out an angle-resolved photoemission study for CoSi 2 nanofilms grown on the Si(111)-7×7 substrates. The surface of CoSi2(111) nanofilm changes from the bulk-truncated surface to the surface with additional Si-bilayer by annealing at higher temperature above 825 K. The angle-resolved photoemission spectra of the CoSi2 nanofilm annealed at 853 K show the spectral features originated from the surface resonance state on the CoSi2 surface terminated by Si-bilayer. From the detailed photoemission study, we discuss the surface electronic structure in CoSi2(111) nanofilms grown on Si(111) substrates.
- A. Metal-semiconductor thin film structures
- A. Silicides
- B. Molecular beam epitaxy
- E. Angle-resolved photoemission spectroscopies
ASJC Scopus subject areas
- Condensed Matter Physics
- Materials Chemistry