Abstract
Angle-resolved photoemission measurements with synchrotron radiation (about 20-50 eV) have been carried out on a black-phosphorus single crystal to study the interlayer interaction which characterizes the essential properties of the narrow-gap semiconductor, black P. The band dispersions along the ΓZ (interlayer) direction have been successfully obtained and compared with the self-consistent pseudopotential calculation. It is found that the overall features obtained are in good agreement with the calculation although an overestimation of the interlayer dispersion and the valence-band width by about 0.5 and 1 eV, respectively, was observed in the calculation.
Original language | English |
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Pages (from-to) | 4324-4326 |
Number of pages | 3 |
Journal | Physical Review B |
Volume | 33 |
Issue number | 6 |
DOIs | |
Publication status | Published - 1986 Jan 1 |
ASJC Scopus subject areas
- Condensed Matter Physics