Angle-resolved photoemission study of black phosphorus: Interlayer energy dispersion

T. Takahashi; N. Gunasekara; H. Ohsawa; H. Ishii; T. Kinoshita; S. Suzuki; T. Sagawa; H. Kato; T. Miyahara; I. Shirotani

doi:10.1103/PhysRevB.33.4324

Angle-resolved photoemission study of black phosphorus: Interlayer energy dispersion

T. Takahashi, N. Gunasekara, H. Ohsawa, H. Ishii, T. Kinoshita, S. Suzuki, T. Sagawa, H. Kato, T. Miyahara, I. Shirotani

Advanced Institute for Materials Research (AIMR)

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

Angle-resolved photoemission measurements with synchrotron radiation (about 20-50 eV) have been carried out on a black-phosphorus single crystal to study the interlayer interaction which characterizes the essential properties of the narrow-gap semiconductor, black P. The band dispersions along the ΓZ (interlayer) direction have been successfully obtained and compared with the self-consistent pseudopotential calculation. It is found that the overall features obtained are in good agreement with the calculation although an overestimation of the interlayer dispersion and the valence-band width by about 0.5 and 1 eV, respectively, was observed in the calculation.

Original language	English
Pages (from-to)	4324-4326
Number of pages	3
Journal	Physical Review B
Volume	33
Issue number	6
DOIs	https://doi.org/10.1103/PhysRevB.33.4324
Publication status	Published - 1986 Jan 1

ASJC Scopus subject areas

Condensed Matter Physics

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abstract = "Angle-resolved photoemission measurements with synchrotron radiation (about 20-50 eV) have been carried out on a black-phosphorus single crystal to study the interlayer interaction which characterizes the essential properties of the narrow-gap semiconductor, black P. The band dispersions along the ΓZ (interlayer) direction have been successfully obtained and compared with the self-consistent pseudopotential calculation. It is found that the overall features obtained are in good agreement with the calculation although an overestimation of the interlayer dispersion and the valence-band width by about 0.5 and 1 eV, respectively, was observed in the calculation.",

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T1 - Angle-resolved photoemission study of black phosphorus

T2 - Interlayer energy dispersion

AU - Takahashi, T.

AU - Gunasekara, N.

AU - Ohsawa, H.

AU - Ishii, H.

AU - Kinoshita, T.

AU - Suzuki, S.

AU - Sagawa, T.

AU - Kato, H.

AU - Miyahara, T.

AU - Shirotani, I.

PY - 1986/1/1

Y1 - 1986/1/1

N2 - Angle-resolved photoemission measurements with synchrotron radiation (about 20-50 eV) have been carried out on a black-phosphorus single crystal to study the interlayer interaction which characterizes the essential properties of the narrow-gap semiconductor, black P. The band dispersions along the ΓZ (interlayer) direction have been successfully obtained and compared with the self-consistent pseudopotential calculation. It is found that the overall features obtained are in good agreement with the calculation although an overestimation of the interlayer dispersion and the valence-band width by about 0.5 and 1 eV, respectively, was observed in the calculation.

AB - Angle-resolved photoemission measurements with synchrotron radiation (about 20-50 eV) have been carried out on a black-phosphorus single crystal to study the interlayer interaction which characterizes the essential properties of the narrow-gap semiconductor, black P. The band dispersions along the ΓZ (interlayer) direction have been successfully obtained and compared with the self-consistent pseudopotential calculation. It is found that the overall features obtained are in good agreement with the calculation although an overestimation of the interlayer dispersion and the valence-band width by about 0.5 and 1 eV, respectively, was observed in the calculation.

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