Abstract
Angle-Resolved photoemission measurements were performed on a series of Bi2Sr2Ca1-xYxCu2O8 (x=0.0, 0.2, 0.4, and 0.6) single crystals. It was found that hole-doping in an insulator (x=0.6) produces new electronic states in the charge-transfer gap and the density of new states increases with hole- concentration. In this over-doped region (x=0.0 and 0.2), a slight rigid shift of bands crossing the Fermi level was observed. This suggests that a rigid-band picture may be recovered in the over-doped region.
Original language | English |
---|---|
Pages (from-to) | 1045-1046 |
Number of pages | 2 |
Journal | Physica C: Superconductivity and its applications |
Volume | 185-189 |
Issue number | PART 2 |
DOIs | |
Publication status | Published - 1991 Dec 1 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Energy Engineering and Power Technology
- Electrical and Electronic Engineering