Angle-resolved photoemission study of Bi2Sr2Ca1-xYxCu2O8(x=0.0, 0.2, 0.4, 0.6) single crystals

T. Kusunoki, T. Takahashi, S. Sato, H. Katayama-Yoshida, K. Kamiya, H. Inokuchi

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9 Citations (Scopus)


Angle-Resolved photoemission measurements were performed on a series of Bi2Sr2Ca1-xYxCu2O8 (x=0.0, 0.2, 0.4, and 0.6) single crystals. It was found that hole-doping in an insulator (x=0.6) produces new electronic states in the charge-transfer gap and the density of new states increases with hole- concentration. In this over-doped region (x=0.0 and 0.2), a slight rigid shift of bands crossing the Fermi level was observed. This suggests that a rigid-band picture may be recovered in the over-doped region.

Original languageEnglish
Pages (from-to)1045-1046
Number of pages2
JournalPhysica C: Superconductivity and its applications
Issue numberPART 2
Publication statusPublished - 1991 Dec 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering


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