Angle-resolved photoemission study of Bi2Sr2Ca1-xYxCu2O8(x=0.0, 0.2, 0.4, 0.6) single crystals

T. Kusunoki; T. Takahashi; S. Sato; H. Katayama-Yoshida; K. Kamiya; H. Inokuchi

doi:10.1016/0921-4534(91)91746-Q

Angle-resolved photoemission study of Bi₂Sr₂Ca_1-xY_xCu₂O₈(x=0.0, 0.2, 0.4, 0.6) single crystals

T. Kusunoki, T. Takahashi, S. Sato, H. Katayama-Yoshida, K. Kamiya, H. Inokuchi

Advanced Institute for Materials Research (AIMR)

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

Angle-Resolved photoemission measurements were performed on a series of Bi₂Sr₂Ca_1-xY_xCu₂O₈ (x=0.0, 0.2, 0.4, and 0.6) single crystals. It was found that hole-doping in an insulator (x=0.6) produces new electronic states in the charge-transfer gap and the density of new states increases with hole- concentration. In this over-doped region (x=0.0 and 0.2), a slight rigid shift of bands crossing the Fermi level was observed. This suggests that a rigid-band picture may be recovered in the over-doped region.

Original language	English
Pages (from-to)	1045-1046
Number of pages	2
Journal	Physica C: Superconductivity and its applications
Volume	185-189
Issue number	PART 2
DOIs	https://doi.org/10.1016/0921-4534(91)91746-Q
Publication status	Published - 1991 Dec 1

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Energy Engineering and Power Technology
Electrical and Electronic Engineering

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10.1016/0921-4534(91)91746-Q

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abstract = "Angle-Resolved photoemission measurements were performed on a series of Bi2Sr2Ca1-xYxCu2O8 (x=0.0, 0.2, 0.4, and 0.6) single crystals. It was found that hole-doping in an insulator (x=0.6) produces new electronic states in the charge-transfer gap and the density of new states increases with hole- concentration. In this over-doped region (x=0.0 and 0.2), a slight rigid shift of bands crossing the Fermi level was observed. This suggests that a rigid-band picture may be recovered in the over-doped region.",

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T1 - Angle-resolved photoemission study of Bi2Sr2Ca1-xYxCu2O8(x=0.0, 0.2, 0.4, 0.6) single crystals

AU - Kusunoki, T.

AU - Takahashi, T.

AU - Sato, S.

AU - Katayama-Yoshida, H.

AU - Kamiya, K.

AU - Inokuchi, H.

PY - 1991/12/1

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N2 - Angle-Resolved photoemission measurements were performed on a series of Bi2Sr2Ca1-xYxCu2O8 (x=0.0, 0.2, 0.4, and 0.6) single crystals. It was found that hole-doping in an insulator (x=0.6) produces new electronic states in the charge-transfer gap and the density of new states increases with hole- concentration. In this over-doped region (x=0.0 and 0.2), a slight rigid shift of bands crossing the Fermi level was observed. This suggests that a rigid-band picture may be recovered in the over-doped region.

AB - Angle-Resolved photoemission measurements were performed on a series of Bi2Sr2Ca1-xYxCu2O8 (x=0.0, 0.2, 0.4, and 0.6) single crystals. It was found that hole-doping in an insulator (x=0.6) produces new electronic states in the charge-transfer gap and the density of new states increases with hole- concentration. In this over-doped region (x=0.0 and 0.2), a slight rigid shift of bands crossing the Fermi level was observed. This suggests that a rigid-band picture may be recovered in the over-doped region.

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Angle-resolved photoemission study of Bi₂Sr₂Ca_1-xY_xCu₂O₈(x=0.0, 0.2, 0.4, 0.6) single crystals

Abstract

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