Angle-resolved photoelectron study on the structures of silicon nitride films and Si3 N4 /Si interfaces formed using nitrogen-hydrogen radicals

Takashi Aratani, Masaaki Higuchi, Shigetoshi Sugawa, Eiji Ikenaga, Jiro Ushio, Hiroshi Nohira, Tomoyuki Suwa, Akinobu Teramoto, Tadahiro Ohmi, Takeo Hattori

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17 Citations (Scopus)

Abstract

Soft x-ray-excited angle-resolved photoemission results for nitride films formed using nitrogen-hydrogen radicals on Si(100), Si(111), and Si(110) are reported. The data were obtained using synchrotron radiation, which allowed the Si 2p, N 1s, and O 1s levels to be investigated with the same probing depth. The following main results were obtained: (1) the Si3 N4 film is covered with one monolayer of Si- (OH) 3 N. Its areal density is 15% smaller on Si(111) than on Si(100) and Si (110), (2) the Si3 N4 /Si interfaces on all three surfaces are compositionally abrupt. This conclusion is based on the observation that no Si atoms bonded with three N atoms and one Si atom were detected, and (3) the observation that the number of Si-H bonds at the Si3 N4 /Si (110) interface is 38%-53% larger than those at the Si3 N4 /Si (100) and Si3 N4 /Si (111) interfaces indicates a dependence of the interface structure on the orientation of the substrate.

Original languageEnglish
Article number114112
JournalJournal of Applied Physics
Volume104
Issue number11
DOIs
Publication statusPublished - 2008
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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