Angle-resolved photoelectron spectroscopy study on ultrathin gate dielectrics

Hiroshi Nohira, Takeo Hattori

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    The paper reviews the non-destructive depth profiling of the composition and the chemical structure of ultrathin oxynitride films and ultrathin silicon nitride films using angle-resolved photoelectron spectroscopy. Depth profiles of nitrogen atoms in silicon oxynitride films were determined by applying the maximum entropy concept to angle-resolved photoelectron spectra. The layered structures of silicon nitride films formed using nitrogen-hydrogen radicals were determined by measuring soft X-ray excited angle-resolved photoemission from Si 2p, N 1s, and O 1s core levels with the same probing depth.

    Original languageEnglish
    Title of host publicationECS Transactions - 5th International Symposium on ULSI Process Integration
    Pages183-194
    Number of pages12
    Edition6
    DOIs
    Publication statusPublished - 2007 Dec 1
    Event5th International Symposium on ULSI Process Integration - 212th ECS Meeting - Washington, DC, United States
    Duration: 2007 Oct 72007 Oct 12

    Publication series

    NameECS Transactions
    Number6
    Volume11
    ISSN (Print)1938-5862
    ISSN (Electronic)1938-6737

    Other

    Other5th International Symposium on ULSI Process Integration - 212th ECS Meeting
    CountryUnited States
    CityWashington, DC
    Period07/10/707/10/12

    ASJC Scopus subject areas

    • Engineering(all)

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