@inproceedings{a03218a064e14caf8d81e0c1bb6cc336,
title = "Angle-resolved photoelectron spectroscopy study on ultrathin gate dielectrics",
abstract = "The paper reviews the non-destructive depth profiling of the composition and the chemical structure of ultrathin oxynitride films and ultrathin silicon nitride films using angle-resolved photoelectron spectroscopy. Depth profiles of nitrogen atoms in silicon oxynitride films were determined by applying the maximum entropy concept to angle-resolved photoelectron spectra. The layered structures of silicon nitride films formed using nitrogen-hydrogen radicals were determined by measuring soft X-ray excited angle-resolved photoemission from Si 2p, N 1s, and O 1s core levels with the same probing depth.",
author = "Hiroshi Nohira and Takeo Hattori",
year = "2007",
doi = "10.1149/1.2778376",
language = "English",
isbn = "9781566775724",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "6",
pages = "183--194",
booktitle = "ECS Transactions - 5th International Symposium on ULSI Process Integration",
edition = "6",
note = "5th International Symposium on ULSI Process Integration - 212th ECS Meeting ; Conference date: 07-10-2007 Through 12-10-2007",
}