Angle-resolved photoelectron spectroscopy study on ultrathin gate dielectrics

Hiroshi Nohira, Takeo Hattori

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The paper reviews the non-destructive depth profiling of the composition and the chemical structure of ultrathin oxynitride films and ultrathin silicon nitride films using angle-resolved photoelectron spectroscopy. Depth profiles of nitrogen atoms in silicon oxynitride films were determined by applying the maximum entropy concept to angle-resolved photoelectron spectra. The layered structures of silicon nitride films formed using nitrogen-hydrogen radicals were determined by measuring soft X-ray excited angle-resolved photoemission from Si 2p, N 1s, and O 1s core levels with the same probing depth.

Original languageEnglish
Title of host publicationECS Transactions - 5th International Symposium on ULSI Process Integration
PublisherElectrochemical Society Inc.
Pages183-194
Number of pages12
Edition6
ISBN (Electronic)9781566775724
ISBN (Print)9781566775724
DOIs
Publication statusPublished - 2007
Externally publishedYes
Event5th International Symposium on ULSI Process Integration - 212th ECS Meeting - Washington, DC, United States
Duration: 2007 Oct 72007 Oct 12

Publication series

NameECS Transactions
Number6
Volume11
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other5th International Symposium on ULSI Process Integration - 212th ECS Meeting
Country/TerritoryUnited States
CityWashington, DC
Period07/10/707/10/12

ASJC Scopus subject areas

  • Engineering(all)

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