Angle-resolved photoelectron spectroscopy study on gate insulators

H. Nohira, N. Tamura, J. Ushio, T. Hattori

    Research output: Contribution to conferencePaper

    4 Citations (Scopus)

    Abstract

    As a typical example of angle-resolved photoelectron spectroscopy studies, our detailed study on the composition and the chemical structure of oxynitride films was reviewed. The structure of oxynitride/Si interface was determined from the nearest neighbors of a nitrogen atom and those of a silicon atom detected by X-ray photoelectron spectroscopy. The roughness of interface measured by non-contact mode AFM was found to increase if the amount of nitrogen atoms at the interface exceeds a threshold value of 0.37 monolayers. This increase in interface roughness above this threshold can be attributed to the incorporation of nitrogen atoms in the silicon oxide layer next to the interface.

    Original languageEnglish
    Pages19-32
    Number of pages14
    Publication statusPublished - 2005 Dec 1
    Event207th ECS Meeting - Quebec, Canada
    Duration: 2005 May 162005 May 20

    Other

    Other207th ECS Meeting
    CountryCanada
    CityQuebec
    Period05/5/1605/5/20

    ASJC Scopus subject areas

    • Engineering(all)

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  • Cite this

    Nohira, H., Tamura, N., Ushio, J., & Hattori, T. (2005). Angle-resolved photoelectron spectroscopy study on gate insulators. 19-32. Paper presented at 207th ECS Meeting, Quebec, Canada.