As a typical example of angle-resolved photoelectron spectroscopy studies, our detailed study on the composition and the chemical structure of oxynitride films was reviewed. The structure of oxynitride/Si interface was determined from the nearest neighbors of a nitrogen atom and those of a silicon atom detected by X-ray photoelectron spectroscopy. The roughness of interface measured by non-contact mode AFM was found to increase if the amount of nitrogen atoms at the interface exceeds a threshold value of 0.37 monolayers. This increase in interface roughness above this threshold can be attributed to the incorporation of nitrogen atoms in the silicon oxide layer next to the interface.
|Number of pages||14|
|Publication status||Published - 2005 Dec 1|
|Event||207th ECS Meeting - Quebec, Canada|
Duration: 2005 May 16 → 2005 May 20
|Other||207th ECS Meeting|
|Period||05/5/16 → 05/5/20|
ASJC Scopus subject areas