Angle-resolved photoelectron spectroscopy study on gate insulators

T. Hattori, K. Kakushima, K. Nakajima, H. Nohira, K. Kimura, H. Iwai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

As a typical example of angle-resolved photoelectron spectroscopy studies, our detailed study on the composition and the chemical structure of oxynitride films was reviewed. The structure of oxynitride/Si interface was determined from the nearest neighbors of a nitrogen atom and those of a silicon atom detected by X-ray photoelectron spectroscopy. The roughness of interface measured by non-contact mode AFM was found to increase if the amount of nitrogen atoms at the interface exceeds a threshold value of 0.37 monolayers. This increase in interface roughness above this threshold can be attributed to the incorporation of nitrogen atoms in the silicon oxide layer next to the interface. Copyright The Electrochemical Society.

Original languageEnglish
Title of host publicationDielectrics for Nanosystems II
Subtitle of host publicationMaterials Science, Processing, Reliability, and Manufacturing
Pages275-286
Number of pages12
Edition1
Publication statusPublished - 2006
Externally publishedYes
Event2nd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing - 209th Meeting of the Electrochemical Society - Denver, CO, United States
Duration: 2006 May 72006 May 12

Publication series

NameECS Transactions
Number1
Volume2
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other2nd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing - 209th Meeting of the Electrochemical Society
CountryUnited States
CityDenver, CO
Period06/5/706/5/12

ASJC Scopus subject areas

  • Engineering(all)

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