Angle-resolved photoelectron spectroscopy study on gate insulators

T. Hattori; K. Kakushima; K. Nakajima; H. Nohira; K. Kimura; H. Iwai

Angle-resolved photoelectron spectroscopy study on gate insulators

T. Hattori, K. Kakushima, K. Nakajima, H. Nohira, K. Kimura, H. Iwai

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

As a typical example of angle-resolved photoelectron spectroscopy studies, our detailed study on the composition and the chemical structure of oxynitride films was reviewed. The structure of oxynitride/Si interface was determined from the nearest neighbors of a nitrogen atom and those of a silicon atom detected by X-ray photoelectron spectroscopy. The roughness of interface measured by non-contact mode AFM was found to increase if the amount of nitrogen atoms at the interface exceeds a threshold value of 0.37 monolayers. This increase in interface roughness above this threshold can be attributed to the incorporation of nitrogen atoms in the silicon oxide layer next to the interface. Copyright The Electrochemical Society.

Original language	English
Title of host publication	Dielectrics for Nanosystems II
Subtitle of host publication	Materials Science, Processing, Reliability, and Manufacturing
Pages	275-286
Number of pages	12
Edition	1
Publication status	Published - 2006
Externally published	Yes
Event	2nd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing - 209th Meeting of the Electrochemical Society - Denver, CO, United States Duration: 2006 May 7 → 2006 May 12

Publication series

Name	ECS Transactions
Number	1
Volume	2
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	2nd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing - 209th Meeting of the Electrochemical Society
Country	United States
City	Denver, CO
Period	06/5/7 → 06/5/12

ASJC Scopus subject areas

Engineering(all)

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Cite this

Angle-resolved photoelectron spectroscopy study on gate insulators. / Hattori, T.; Kakushima, K.; Nakajima, K.; Nohira, H.; Kimura, K.; Iwai, H.

Dielectrics for Nanosystems II: Materials Science, Processing, Reliability, and Manufacturing. 1. ed. 2006. p. 275-286 (ECS Transactions; Vol. 2, No. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Hattori, T, Kakushima, K, Nakajima, K, Nohira, H, Kimura, K & Iwai, H 2006, Angle-resolved photoelectron spectroscopy study on gate insulators. in Dielectrics for Nanosystems II: Materials Science, Processing, Reliability, and Manufacturing. 1 edn, ECS Transactions, no. 1, vol. 2, pp. 275-286, 2nd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing - 209th Meeting of the Electrochemical Society, Denver, CO, United States, 06/5/7.

@inproceedings{a04f40e244a54afbb0050d1276bce04d,

title = "Angle-resolved photoelectron spectroscopy study on gate insulators",

abstract = "As a typical example of angle-resolved photoelectron spectroscopy studies, our detailed study on the composition and the chemical structure of oxynitride films was reviewed. The structure of oxynitride/Si interface was determined from the nearest neighbors of a nitrogen atom and those of a silicon atom detected by X-ray photoelectron spectroscopy. The roughness of interface measured by non-contact mode AFM was found to increase if the amount of nitrogen atoms at the interface exceeds a threshold value of 0.37 monolayers. This increase in interface roughness above this threshold can be attributed to the incorporation of nitrogen atoms in the silicon oxide layer next to the interface. Copyright The Electrochemical Society.",

author = "T. Hattori and K. Kakushima and K. Nakajima and H. Nohira and K. Kimura and H. Iwai",

year = "2006",

language = "English",

isbn = "1566774381",

series = "ECS Transactions",

number = "1",

pages = "275--286",

booktitle = "Dielectrics for Nanosystems II",

edition = "1",

note = "2nd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing - 209th Meeting of the Electrochemical Society ; Conference date: 07-05-2006 Through 12-05-2006",

}

TY - GEN

T1 - Angle-resolved photoelectron spectroscopy study on gate insulators

AU - Hattori, T.

AU - Kakushima, K.

AU - Nakajima, K.

AU - Nohira, H.

AU - Kimura, K.

AU - Iwai, H.

PY - 2006

Y1 - 2006

N2 - As a typical example of angle-resolved photoelectron spectroscopy studies, our detailed study on the composition and the chemical structure of oxynitride films was reviewed. The structure of oxynitride/Si interface was determined from the nearest neighbors of a nitrogen atom and those of a silicon atom detected by X-ray photoelectron spectroscopy. The roughness of interface measured by non-contact mode AFM was found to increase if the amount of nitrogen atoms at the interface exceeds a threshold value of 0.37 monolayers. This increase in interface roughness above this threshold can be attributed to the incorporation of nitrogen atoms in the silicon oxide layer next to the interface. Copyright The Electrochemical Society.

AB - As a typical example of angle-resolved photoelectron spectroscopy studies, our detailed study on the composition and the chemical structure of oxynitride films was reviewed. The structure of oxynitride/Si interface was determined from the nearest neighbors of a nitrogen atom and those of a silicon atom detected by X-ray photoelectron spectroscopy. The roughness of interface measured by non-contact mode AFM was found to increase if the amount of nitrogen atoms at the interface exceeds a threshold value of 0.37 monolayers. This increase in interface roughness above this threshold can be attributed to the incorporation of nitrogen atoms in the silicon oxide layer next to the interface. Copyright The Electrochemical Society.

UR - http://www.scopus.com/inward/record.url?scp=33745443559&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33745443559&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:33745443559

SN - 1566774381

SN - 9781566774383

T3 - ECS Transactions

SP - 275

EP - 286

BT - Dielectrics for Nanosystems II

T2 - 2nd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing - 209th Meeting of the Electrochemical Society

Y2 - 7 May 2006 through 12 May 2006

ER -