@inproceedings{a04f40e244a54afbb0050d1276bce04d,
title = "Angle-resolved photoelectron spectroscopy study on gate insulators",
abstract = "As a typical example of angle-resolved photoelectron spectroscopy studies, our detailed study on the composition and the chemical structure of oxynitride films was reviewed. The structure of oxynitride/Si interface was determined from the nearest neighbors of a nitrogen atom and those of a silicon atom detected by X-ray photoelectron spectroscopy. The roughness of interface measured by non-contact mode AFM was found to increase if the amount of nitrogen atoms at the interface exceeds a threshold value of 0.37 monolayers. This increase in interface roughness above this threshold can be attributed to the incorporation of nitrogen atoms in the silicon oxide layer next to the interface. Copyright The Electrochemical Society.",
author = "T. Hattori and K. Kakushima and K. Nakajima and H. Nohira and K. Kimura and H. Iwai",
year = "2006",
language = "English",
isbn = "1566774381",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "1",
pages = "275--286",
booktitle = "Dielectrics for Nanosystems II",
edition = "1",
note = "2nd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing - 209th Meeting of the Electrochemical Society ; Conference date: 07-05-2006 Through 12-05-2006",
}