Angle-resolved photoelectron spectroscopy on gate insulators

T. Hattori, H. Nohira, S. Shinagawa, M. Hori, M. Kase, T. Maruizumi

    Research output: Contribution to journalArticlepeer-review

    11 Citations (Scopus)

    Abstract

    This work reviews the study of the chemical composition and the chemical structure of ultrathin oxynitride films using angle-resolved photoelectron spectroscopy. The nearest and the second nearest neighbors of a nitrogen atom in oxynitride films were determined from the deconvolution of N 1s spectra. It was found by applying maximum entropy concept to the angle resolved Si 2p and N 1s photoelectron spectra that the distribution of nitrogen atoms and their bonding configurations in oxynitride films formed by the plasma nitridation is quite different from those in oxynitride films formed by the interface nitridation.

    Original languageEnglish
    Pages (from-to)20-26
    Number of pages7
    JournalMicroelectronics Reliability
    Volume47
    Issue number1
    DOIs
    Publication statusPublished - 2007 Jan

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Atomic and Molecular Physics, and Optics
    • Condensed Matter Physics
    • Safety, Risk, Reliability and Quality
    • Surfaces, Coatings and Films
    • Electrical and Electronic Engineering

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