Angle-resolved photoelectron spectroscopy on gate insulators

T. Hattori; H. Nohira; S. Shinagawa; M. Hori; M. Kase; T. Maruizumi

doi:10.1016/j.microrel.2006.03.003

Angle-resolved photoelectron spectroscopy on gate insulators

T. Hattori, H. Nohira, S. Shinagawa, M. Hori, M. Kase, T. Maruizumi

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

This work reviews the study of the chemical composition and the chemical structure of ultrathin oxynitride films using angle-resolved photoelectron spectroscopy. The nearest and the second nearest neighbors of a nitrogen atom in oxynitride films were determined from the deconvolution of N 1s spectra. It was found by applying maximum entropy concept to the angle resolved Si 2p and N 1s photoelectron spectra that the distribution of nitrogen atoms and their bonding configurations in oxynitride films formed by the plasma nitridation is quite different from those in oxynitride films formed by the interface nitridation.

Original language	English
Pages (from-to)	20-26
Number of pages	7
Journal	Microelectronics Reliability
Volume	47
Issue number	1
DOIs	https://doi.org/10.1016/j.microrel.2006.03.003
Publication status	Published - 2007 Jan

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Safety, Risk, Reliability and Quality
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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abstract = "This work reviews the study of the chemical composition and the chemical structure of ultrathin oxynitride films using angle-resolved photoelectron spectroscopy. The nearest and the second nearest neighbors of a nitrogen atom in oxynitride films were determined from the deconvolution of N 1s spectra. It was found by applying maximum entropy concept to the angle resolved Si 2p and N 1s photoelectron spectra that the distribution of nitrogen atoms and their bonding configurations in oxynitride films formed by the plasma nitridation is quite different from those in oxynitride films formed by the interface nitridation.",

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note = "Funding Information: This research was conducted as a program for the “Promotion of Leading Researches” in Special Coordination Funds for Promoting Science and Technology by Ministry of Education, Culture, Sports, Science and Technology, Japan. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.",

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AU - Hattori, T.

AU - Nohira, H.

AU - Shinagawa, S.

AU - Hori, M.

AU - Kase, M.

AU - Maruizumi, T.

N1 - Funding Information: This research was conducted as a program for the “Promotion of Leading Researches” in Special Coordination Funds for Promoting Science and Technology by Ministry of Education, Culture, Sports, Science and Technology, Japan. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.

PY - 2007/1

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N2 - This work reviews the study of the chemical composition and the chemical structure of ultrathin oxynitride films using angle-resolved photoelectron spectroscopy. The nearest and the second nearest neighbors of a nitrogen atom in oxynitride films were determined from the deconvolution of N 1s spectra. It was found by applying maximum entropy concept to the angle resolved Si 2p and N 1s photoelectron spectra that the distribution of nitrogen atoms and their bonding configurations in oxynitride films formed by the plasma nitridation is quite different from those in oxynitride films formed by the interface nitridation.

AB - This work reviews the study of the chemical composition and the chemical structure of ultrathin oxynitride films using angle-resolved photoelectron spectroscopy. The nearest and the second nearest neighbors of a nitrogen atom in oxynitride films were determined from the deconvolution of N 1s spectra. It was found by applying maximum entropy concept to the angle resolved Si 2p and N 1s photoelectron spectra that the distribution of nitrogen atoms and their bonding configurations in oxynitride films formed by the plasma nitridation is quite different from those in oxynitride films formed by the interface nitridation.

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Angle-resolved photoelectron spectroscopy on gate insulators

Abstract

ASJC Scopus subject areas

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