Nb0.06SnxTi0.94-xO2 (x ≤ 0.3) thin films were grown by a pulsed-laser deposition method with varying Sn concentration. Through a combinatorial technique, we find that Sn concentration can reach a maximum of about x ≤ 0.3 while maintaining the stable anatase phase and epitaxy. A doping concentration dependence of the refractivity is revealed, in which refractivity reduction at a wavelength of λ ≤ 500 nm is estimated to be 12.4% for Nb0.06Sn0.3 Ti 0.64O2 thin film. Sn doping induced band-gap blue shift can be contributed to the mixing of extended Sn 5s orbitals with the conduction band of TiO2. Low resistivity on the order of 10-4 Ω cm at room temperature and high internal transmittance of more than 95% in the visible light region are exhibited for Nb0.06Snx Ti 0.94-xO2 thin films (x ≤ 0.2). Optical and transport analyses demonstrate that doping Sn into Nb0.06 Ti 0.94O2 can reduce the refractivity while maintaining low resistivity and high transparency.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Acoustics and Ultrasonics
- Surfaces, Coatings and Films