Analysis of x-ray irradiation effect in high-k gate dielectrics by time-dependent photoemission spectroscopy using synchrotron radiation

T. Tanimura, S. Toyoda, H. Kumigashira, M. Oshima, K. Ikeda, G. L. Liu, Z. Liu, K. Usuda

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

We have developed a method to precisely determine the band offsets for hafnium oxide (HfO2), hafnium silicate (HfSiO) and nitrided hafnium silicate (HfSiON) films on Si by elimination of x-ray irradiation effects with time-dependent photoemission spectroscopy (PES) and x-ray absorption spectroscopy. The core-level PES spectra shift during PES measurements, which is explained as the dielectric films charging due to photoemission by the x-ray irradiation. For elimination of the x-ray irradiation effect on the determination of the band offsets, time-dependent photoemission spectroscopy was performed. The precisely determined valence band offsets for HfO2, HfSiO and HfSiON are 3.2, 3.4, and 1.9 eV, respectively. On the other hand, the conduction band offsets are almost the same values of about 1.3 eV. Thus, the elimination of x-ray irradiation effect enables to precisely determine the band offsets, leading to the accurate estimation of gate leakage current.

Original languageEnglish
Pages (from-to)1606-1609
Number of pages4
JournalSurface and Interface Analysis
Volume40
Issue number13
DOIs
Publication statusPublished - 2008 Dec
Externally publishedYes

Keywords

  • Band offsets
  • High-k dielectrics
  • PES
  • X-ray irradiation time dependence

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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