Analysis of Vth flexibility in ultrathin-BOX SOI FinFETs

K. Endo, Y. Ishikawa, Y. Liu, T. Matsukawa, S. O'Uchi, J. Tsukada, S. Migita, W. Mizubayashi, Y. Morita, H. Ota, H. Yamauchi, M. Masahara

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We have successfully demonstrated a Vth controllable multigate FinFET on a 10-nm-thick ultrathin BOX (UTB) SOI substrate. It is revealed that the Vth of the FinFET on the UTB SOI substrate is effectively modulated thanks to the improved coupling between the Si channel and the back gate. We have also carried out analysis of the Vth controllability in terms of the size dependence such as the gate length (LG) and the fin width (TFin).

Original languageEnglish
Title of host publication2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013
PublisherIEEE Computer Society
ISBN (Print)9781479913602
DOIs
Publication statusPublished - 2013 Jan 1
Externally publishedYes
Event2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013 - Monterey, CA, United States
Duration: 2013 Oct 72013 Oct 10

Publication series

Name2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013

Other

Other2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013
CountryUnited States
CityMonterey, CA
Period13/10/713/10/10

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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