Abstract
The photoresponse characteristics of ZnO films prepared by unbalanced magnetron sputtering were discussed. The changes in the crystallographic orientation and the microstructure of the film were also presented. It was found that the magnitude of the photocurrent and the rise time decreased with increasing number of trap levels.
| Original language | English |
|---|---|
| Pages (from-to) | 3963-3970 |
| Number of pages | 8 |
| Journal | Journal of Applied Physics |
| Volume | 93 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - 2003 Apr 1 |
| Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy(all)