Analysis of threshold voltage shifts in double gate tunnel FinFETs: Effects of improved electrostatics by gate dielectrics and back gate effects

W. Mizubayashi, K. Fukuda, T. Mori, K. Endo, Y. X. Liu, T. Matsukawa, S. O'Uchi, Y. Ishikawa, S. Migita, Y. Morita, A. Tanabe, J. Tsukada, H. Yamauchi, M. Masahara, H. Ota

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

We analyzed the threshold voltage (Vth) shift due to EOT scaling in double gate (DG) tunnel FinFETs (tFinFETs). It is found that Vth in tFinFETs has high sensitivity of EOT, which is quite different as compared with MOSFETs. We proposed a simple model which is indispensable to design the tFinFETs structure for the first time. In order to correct the Vth modulation due to EOT scaling in tFinFETs, we studied the back gate effect in independent-DG tFinFETs and revealed that the back bias is effective as is the case in the MOSFETs.

Original languageEnglish
Title of host publication2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013
DOIs
Publication statusPublished - 2013 Aug 12
Externally publishedYes
Event2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013 - Hsinchu, Taiwan, Province of China
Duration: 2013 Apr 222013 Apr 24

Publication series

Name2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013

Conference

Conference2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013
CountryTaiwan, Province of China
CityHsinchu
Period13/4/2213/4/24

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • Cite this

    Mizubayashi, W., Fukuda, K., Mori, T., Endo, K., Liu, Y. X., Matsukawa, T., O'Uchi, S., Ishikawa, Y., Migita, S., Morita, Y., Tanabe, A., Tsukada, J., Yamauchi, H., Masahara, M., & Ota, H. (2013). Analysis of threshold voltage shifts in double gate tunnel FinFETs: Effects of improved electrostatics by gate dielectrics and back gate effects. In 2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013 [6545646] (2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013). https://doi.org/10.1109/VLSI-TSA.2013.6545646