Analysis of threshold voltage flexibility in ultrathin-BOX SOI FinFETs

Kazuhiko Endo, Shinji Migita, Yuki Ishikawa, Takashi Matsukawa, Shin Ichi O'uchi, Junji Tsukada, Wataru Mizubayashi, Yukinori Morita, Hiroyuki Ota, Hitomi Yamauchi, Meishoku Masahara

Research output: Contribution to journalArticlepeer-review

Abstract

A threshold voltage (Vth) controllable multigate FinFET on a 10-nm-thick ultrathin BOX (UTB) SOI substrate have been investigated. It is revealed that the Vth of the FinFET on the UTB SOI substrate is effectively modulated thanks to the improved coupling between the Si channel and the back gate. We have also carried out analysis of the Vth controllability in terms of the size dependence such as the gate length (LG) and the fin width (TFin).

Original languageEnglish
Pages (from-to)110-118
Number of pages9
JournalJournal of Low Power Electronics and Applications
Volume4
Issue number2
DOIs
Publication statusPublished - 2014 May 23
Externally publishedYes

Keywords

  • FinFET
  • SOI
  • Threshold

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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