TY - JOUR
T1 - Analysis of the Spiral Step Structure and the Initial Solution Growth Behavior of SiC by Real-Time Observation of the Growth Interface
AU - Kawanishi, Sakiko
AU - Kamiko, Masao
AU - Yoshikawa, Takeshi
AU - Mitsuda, Yoshitaka
AU - Morita, Kazuki
N1 - Funding Information:
This research was partly supported by a Grant-in-Aid for Young Scientists (A) (Grant No. 24686083) from the Japan Society for the Promotion of Science. The authors are grateful to Dr. Kamei and Dr. Kusunoki at Nippon Steel and Sumitomo Metal Corporation, and Mr. Sato and Mr. Daikoku at Toyota Motor Corporation for their fruitful comments on the real-time observations
Publisher Copyright:
© 2016 American Chemical Society.
PY - 2016/9/7
Y1 - 2016/9/7
N2 - Microscopic real-time observation of the solution growth interface of SiC using Fe-Si solvent at 1673 K was successfully performed to understand the interface morphology at the initial stage of solution growth. The growth interface was composed of a number of domains with step-terrace structures originating from either spiral growth of 4H-SiC or two-dimensional island growth of other polytypes. The validity of the measurements of the step structures by bright-field and interference images was confirmed by ex-situ atomic force microscopy. In addition, the encounter between a spiral growth domain and steps from another spiral growth domain was observed, and it was found that a certain step height is needed to stop spiral growth by covering the spiral center.
AB - Microscopic real-time observation of the solution growth interface of SiC using Fe-Si solvent at 1673 K was successfully performed to understand the interface morphology at the initial stage of solution growth. The growth interface was composed of a number of domains with step-terrace structures originating from either spiral growth of 4H-SiC or two-dimensional island growth of other polytypes. The validity of the measurements of the step structures by bright-field and interference images was confirmed by ex-situ atomic force microscopy. In addition, the encounter between a spiral growth domain and steps from another spiral growth domain was observed, and it was found that a certain step height is needed to stop spiral growth by covering the spiral center.
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U2 - 10.1021/acs.cgd.5b01777
DO - 10.1021/acs.cgd.5b01777
M3 - Article
AN - SCOPUS:84986197502
VL - 16
SP - 4822
EP - 4830
JO - Crystal Growth and Design
JF - Crystal Growth and Design
SN - 1528-7483
IS - 9
ER -