Analysis of the Spiral Step Structure and the Initial Solution Growth Behavior of SiC by Real-Time Observation of the Growth Interface

Sakiko Kawanishi; Masao Kamiko; Takeshi Yoshikawa; Yoshitaka Mitsuda; Kazuki Morita

doi:10.1021/acs.cgd.5b01777

Analysis of the Spiral Step Structure and the Initial Solution Growth Behavior of SiC by Real-Time Observation of the Growth Interface

Sakiko Kawanishi, Masao Kamiko, Takeshi Yoshikawa, Yoshitaka Mitsuda, Kazuki Morita

Research output: Contribution to journal › Article

7 Citations (Scopus)

Abstract

Microscopic real-time observation of the solution growth interface of SiC using Fe-Si solvent at 1673 K was successfully performed to understand the interface morphology at the initial stage of solution growth. The growth interface was composed of a number of domains with step-terrace structures originating from either spiral growth of 4H-SiC or two-dimensional island growth of other polytypes. The validity of the measurements of the step structures by bright-field and interference images was confirmed by ex-situ atomic force microscopy. In addition, the encounter between a spiral growth domain and steps from another spiral growth domain was observed, and it was found that a certain step height is needed to stop spiral growth by covering the spiral center.

Original language	English
Pages (from-to)	4822-4830
Number of pages	9
Journal	Crystal Growth and Design
Volume	16
Issue number	9
DOIs	https://doi.org/10.1021/acs.cgd.5b01777
Publication status	Published - 2016 Sep 7
Externally published	Yes

ASJC Scopus subject areas

Chemistry(all)
Materials Science(all)
Condensed Matter Physics

Access to Document

10.1021/acs.cgd.5b01777

Fingerprint Dive into the research topics of 'Analysis of the Spiral Step Structure and the Initial Solution Growth Behavior of SiC by Real-Time Observation of the Growth Interface'. Together they form a unique fingerprint.

Cite this

@article{ca6ce128aa72489997c74115db971ab3,

title = "Analysis of the Spiral Step Structure and the Initial Solution Growth Behavior of SiC by Real-Time Observation of the Growth Interface",

abstract = "Microscopic real-time observation of the solution growth interface of SiC using Fe-Si solvent at 1673 K was successfully performed to understand the interface morphology at the initial stage of solution growth. The growth interface was composed of a number of domains with step-terrace structures originating from either spiral growth of 4H-SiC or two-dimensional island growth of other polytypes. The validity of the measurements of the step structures by bright-field and interference images was confirmed by ex-situ atomic force microscopy. In addition, the encounter between a spiral growth domain and steps from another spiral growth domain was observed, and it was found that a certain step height is needed to stop spiral growth by covering the spiral center.",

author = "Sakiko Kawanishi and Masao Kamiko and Takeshi Yoshikawa and Yoshitaka Mitsuda and Kazuki Morita",

year = "2016",

month = sep,

day = "7",

doi = "10.1021/acs.cgd.5b01777",

language = "English",

volume = "16",

pages = "4822--4830",

journal = "Crystal Growth and Design",

issn = "1528-7483",

publisher = "American Chemical Society",

number = "9",

}

TY - JOUR

T1 - Analysis of the Spiral Step Structure and the Initial Solution Growth Behavior of SiC by Real-Time Observation of the Growth Interface

AU - Kawanishi, Sakiko

AU - Kamiko, Masao

AU - Yoshikawa, Takeshi

AU - Mitsuda, Yoshitaka

AU - Morita, Kazuki

PY - 2016/9/7

Y1 - 2016/9/7

N2 - Microscopic real-time observation of the solution growth interface of SiC using Fe-Si solvent at 1673 K was successfully performed to understand the interface morphology at the initial stage of solution growth. The growth interface was composed of a number of domains with step-terrace structures originating from either spiral growth of 4H-SiC or two-dimensional island growth of other polytypes. The validity of the measurements of the step structures by bright-field and interference images was confirmed by ex-situ atomic force microscopy. In addition, the encounter between a spiral growth domain and steps from another spiral growth domain was observed, and it was found that a certain step height is needed to stop spiral growth by covering the spiral center.

AB - Microscopic real-time observation of the solution growth interface of SiC using Fe-Si solvent at 1673 K was successfully performed to understand the interface morphology at the initial stage of solution growth. The growth interface was composed of a number of domains with step-terrace structures originating from either spiral growth of 4H-SiC or two-dimensional island growth of other polytypes. The validity of the measurements of the step structures by bright-field and interference images was confirmed by ex-situ atomic force microscopy. In addition, the encounter between a spiral growth domain and steps from another spiral growth domain was observed, and it was found that a certain step height is needed to stop spiral growth by covering the spiral center.

UR - http://www.scopus.com/inward/record.url?scp=84986197502&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84986197502&partnerID=8YFLogxK

U2 - 10.1021/acs.cgd.5b01777

DO - 10.1021/acs.cgd.5b01777

M3 - Article

AN - SCOPUS:84986197502

VL - 16

SP - 4822

EP - 4830

JO - Crystal Growth and Design

JF - Crystal Growth and Design

SN - 1528-7483

IS - 9

ER -