Analysis of the Spiral Step Structure and the Initial Solution Growth Behavior of SiC by Real-Time Observation of the Growth Interface

Sakiko Kawanishi, Masao Kamiko, Takeshi Yoshikawa, Yoshitaka Mitsuda, Kazuki Morita

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Microscopic real-time observation of the solution growth interface of SiC using Fe-Si solvent at 1673 K was successfully performed to understand the interface morphology at the initial stage of solution growth. The growth interface was composed of a number of domains with step-terrace structures originating from either spiral growth of 4H-SiC or two-dimensional island growth of other polytypes. The validity of the measurements of the step structures by bright-field and interference images was confirmed by ex-situ atomic force microscopy. In addition, the encounter between a spiral growth domain and steps from another spiral growth domain was observed, and it was found that a certain step height is needed to stop spiral growth by covering the spiral center.

Original languageEnglish
Pages (from-to)4822-4830
Number of pages9
JournalCrystal Growth and Design
Volume16
Issue number9
DOIs
Publication statusPublished - 2016 Sep 7
Externally publishedYes

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

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