Analysis of the relation between leakage current and dislocations in GaN-based light-emitting devices

S. W. Lee, D. C. Oh, H. Goto, J. S. Ha, H. J. Lee, T. Hanada, M. W. Cho, S. K. Hong, H. Y. Lee, S. R. Cho, J. W. Choi, J. H. Choi, J. H. Jang, J. E. Shin, J. S. Lee, T. Yao

Research output: Contribution to journalConference articlepeer-review

7 Citations (Scopus)


In order to understand the origin of leakage current, light emitting devices were grown on two different templates with apparently different dislocation density: one on thin GaN template (∼2 μm) with higher dislocation density (low × 109 cm-2) prepared by metal-organic vapor-phase epitaxy (sample A), and the other on thick GaN template (∼20 μm) with comparatively low dislocation density (high × 108 cm-2) by hydride vapor-phase epitaxy (sample B). Especially, the template B showed very low value of the dislocation density for a screw component, 2.2 × 107 cm-2 evaluated by transmission electron microscope and 2.3 × 107 cm2 approximated by the Williamson-Hall plot which was evaluated by high resolution X-ray diffraction, respectively. On the other hand, sample A showed one order higher, low × 108 cm-2, than that of sample B for a screw component. Sample A showed the larger leakage current (more than two orders of magnitude) than sample B in a forward-biased region and a reverse-biased region also. It is expected that the screw dislocation were strongly contributed to the leakage current of forward and reverse I-V regions in LEDs.

Original languageEnglish
Pages (from-to)37-40
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Issue number1
Publication statusPublished - 2007
Event6th International Symposium on Blue Laser and Light Emitting Diodes, ISBLLED 2006 - Montpellier, France
Duration: 2006 May 152006 May 19

ASJC Scopus subject areas

  • Condensed Matter Physics


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