Analysis of the influence of sputtering damage to polymer gate insulators in amorphous InGaZnO 4 thin-film transistors

Mitsuru Nakata, Hiroto Sato, Yoshiki Nakajima, Hiroshi Tsuji, Yoshihide Fujisaki, Tatsuya Takei, Toshihiro Yamamoto, Hideo Fujikake

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)

Abstract

We have fabricated InGaZnO 4 (IGZO) thin-film transistors (TFTs) with olefin-type polymer gate insulators formed at 130 °C and compared the transfer characteristics of top- and bottom-gate structures. We have investigated the mechanism behind the differences in the characteristics, focusing on the influence of IGZO sputtering damage to the polymer insulators. Bottom-gate IGZO-TFTs showed significant threshold voltage decreases attributable to positive fixed charges in the polymer gate insulators. These charges were generated by diffused metal ions during IGZO sputtering. Contrastingly, there was no sputtering damage to the polymer gate insulators in top-gate IGZO-TFTs, and these showed good switching performance.

Original languageEnglish
Article number044105
JournalJapanese journal of applied physics
Volume51
Issue number4 PART 1
DOIs
Publication statusPublished - 2012 Apr
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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