We have fabricated InGaZnO 4 (IGZO) thin-film transistors (TFTs) with olefin-type polymer gate insulators formed at 130 °C and compared the transfer characteristics of top- and bottom-gate structures. We have investigated the mechanism behind the differences in the characteristics, focusing on the influence of IGZO sputtering damage to the polymer insulators. Bottom-gate IGZO-TFTs showed significant threshold voltage decreases attributable to positive fixed charges in the polymer gate insulators. These charges were generated by diffused metal ions during IGZO sputtering. Contrastingly, there was no sputtering damage to the polymer gate insulators in top-gate IGZO-TFTs, and these showed good switching performance.
ASJC Scopus subject areas
- Physics and Astronomy(all)