@inproceedings{66cfe8bb8d2648bbaeca2cb35620e45b,
title = "Analysis of the energy structure of nitrogen δ-doped GaAs superlattices for high efficiency intermediate band solar cells",
abstract = "Nitrogen δ-doped GaAs superlattices were fabricated and their energy structures were investigated. Several transitions related to E+ band of nitrogen δ-doped regions were observed in photoreflectance (PR) spectra at energies ranging 1.5-1.7 eV for the superlattices at which no transitions were observed for uniformly doped GaAsN. The PR signal intensity of E + related band transitions is significantly higher than those observed in uniformly doped GaAsN. This enhancement of E+ related band transitions is advantageous as an intermediate band material, and thus, nitrogen δ-doped GaAs superlattice structures are expected to be an excellent alternative for the use of intermediate band solar cells.",
keywords = "doping, gallium arsenide, nanostructure, semiconductor, solar energy, spectroscopy, superlattices",
author = "Shunsuke Noguchi and Shuhei Yagi and Yasuto Hijikata and Kentaro Onabe and Shigeyuki Kuboya and Hiroyuki Yaguchi",
year = "2012",
month = nov,
day = "26",
doi = "10.1109/PVSC.2012.6317573",
language = "English",
isbn = "9781467300643",
series = "Conference Record of the IEEE Photovoltaic Specialists Conference",
pages = "83--86",
booktitle = "Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012",
note = "38th IEEE Photovoltaic Specialists Conference, PVSC 2012 ; Conference date: 03-06-2012 Through 08-06-2012",
}