Abstract
Current status and future prospects towards BaSi2 pn junction solar cells are presented. As a preliminary step toward the formation of BaSi2 homojunction diodes, diodes with a Cr/n-BaSi2 Schottky junction and an n-BaSi2/p-Si hetero-junction have been fabricated to investigate the electrical properties of the n-BaSi2. Clear rectifying properties were observed in the current density versus voltage characteristics in both diodes. From the capacitance-voltage measurements, the build-in potential, VD, was 0.53V in the Cr/n-BaSi2 Schottky junction diode, and the Schottky barrier height was 0.73eV calculated from the thermoionic emission theory; the VD was about 1.5V in the n-BaSi2/p-Si hetero-junction diode, which was consistent with the difference in the Fermi level between the n-BaSi2 and the p-Si.
Original language | English |
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Article number | 223701 |
Journal | Journal of Applied Physics |
Volume | 115 |
Issue number | 22 |
DOIs | |
Publication status | Published - 2014 Jun 14 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy(all)