Analysis of the electrical properties of Cr/n-BaSi2 Schottky junction and n-BaSi2/p-Si heterojunction diodes for solar cell applications

Weijie Du; Masakazu Baba; Kaoru Toko; Kosuke O. Hara; Kentaro Watanabe; Takashi Sekiguchi; Noritaka Usami; Takashi Suemasu

doi:10.1063/1.4882117

Analysis of the electrical properties of Cr/n-BaSi₂ Schottky junction and n-BaSi₂/p-Si heterojunction diodes for solar cell applications

Weijie Du, Masakazu Baba, Kaoru Toko, Kosuke O. Hara, Kentaro Watanabe, Takashi Sekiguchi, Noritaka Usami, Takashi Suemasu

Research output: Contribution to journal › Article › peer-review

42 Citations (Scopus)

Abstract

Current status and future prospects towards BaSi₂ pn junction solar cells are presented. As a preliminary step toward the formation of BaSi₂ homojunction diodes, diodes with a Cr/n-BaSi₂ Schottky junction and an n-BaSi₂/p-Si hetero-junction have been fabricated to investigate the electrical properties of the n-BaSi₂. Clear rectifying properties were observed in the current density versus voltage characteristics in both diodes. From the capacitance-voltage measurements, the build-in potential, V_D, was 0.53V in the Cr/n-BaSi₂ Schottky junction diode, and the Schottky barrier height was 0.73eV calculated from the thermoionic emission theory; the V_D was about 1.5V in the n-BaSi₂/p-Si hetero-junction diode, which was consistent with the difference in the Fermi level between the n-BaSi₂ and the p-Si.

Original language	English
Article number	223701
Journal	Journal of Applied Physics
Volume	115
Issue number	22
DOIs	https://doi.org/10.1063/1.4882117
Publication status	Published - 2014 Jun 14
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.4882117

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Analysis of the electrical properties of Cr/n-BaSi₂ Schottky junction and n-BaSi₂/p-Si heterojunction diodes for solar cell applications. / Du, Weijie; Baba, Masakazu; Toko, Kaoru; Hara, Kosuke O.; Watanabe, Kentaro; Sekiguchi, Takashi; Usami, Noritaka; Suemasu, Takashi.

In: Journal of Applied Physics, Vol. 115, No. 22, 223701, 14.06.2014.

Research output: Contribution to journal › Article › peer-review

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title = "Analysis of the electrical properties of Cr/n-BaSi2 Schottky junction and n-BaSi2/p-Si heterojunction diodes for solar cell applications",

abstract = "Current status and future prospects towards BaSi2 pn junction solar cells are presented. As a preliminary step toward the formation of BaSi2 homojunction diodes, diodes with a Cr/n-BaSi2 Schottky junction and an n-BaSi2/p-Si hetero-junction have been fabricated to investigate the electrical properties of the n-BaSi2. Clear rectifying properties were observed in the current density versus voltage characteristics in both diodes. From the capacitance-voltage measurements, the build-in potential, VD, was 0.53V in the Cr/n-BaSi2 Schottky junction diode, and the Schottky barrier height was 0.73eV calculated from the thermoionic emission theory; the VD was about 1.5V in the n-BaSi2/p-Si hetero-junction diode, which was consistent with the difference in the Fermi level between the n-BaSi2 and the p-Si.",

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AU - Du, Weijie

AU - Baba, Masakazu

AU - Toko, Kaoru

AU - Hara, Kosuke O.

AU - Watanabe, Kentaro

AU - Sekiguchi, Takashi

AU - Usami, Noritaka

AU - Suemasu, Takashi

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N2 - Current status and future prospects towards BaSi2 pn junction solar cells are presented. As a preliminary step toward the formation of BaSi2 homojunction diodes, diodes with a Cr/n-BaSi2 Schottky junction and an n-BaSi2/p-Si hetero-junction have been fabricated to investigate the electrical properties of the n-BaSi2. Clear rectifying properties were observed in the current density versus voltage characteristics in both diodes. From the capacitance-voltage measurements, the build-in potential, VD, was 0.53V in the Cr/n-BaSi2 Schottky junction diode, and the Schottky barrier height was 0.73eV calculated from the thermoionic emission theory; the VD was about 1.5V in the n-BaSi2/p-Si hetero-junction diode, which was consistent with the difference in the Fermi level between the n-BaSi2 and the p-Si.

AB - Current status and future prospects towards BaSi2 pn junction solar cells are presented. As a preliminary step toward the formation of BaSi2 homojunction diodes, diodes with a Cr/n-BaSi2 Schottky junction and an n-BaSi2/p-Si hetero-junction have been fabricated to investigate the electrical properties of the n-BaSi2. Clear rectifying properties were observed in the current density versus voltage characteristics in both diodes. From the capacitance-voltage measurements, the build-in potential, VD, was 0.53V in the Cr/n-BaSi2 Schottky junction diode, and the Schottky barrier height was 0.73eV calculated from the thermoionic emission theory; the VD was about 1.5V in the n-BaSi2/p-Si hetero-junction diode, which was consistent with the difference in the Fermi level between the n-BaSi2 and the p-Si.

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Analysis of the electrical properties of Cr/n-BaSi₂ Schottky junction and n-BaSi₂/p-Si heterojunction diodes for solar cell applications

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