Analysis of the electrical properties of Cr/n-BaSi2 Schottky junction and n-BaSi2/p-Si heterojunction diodes for solar cell applications

Weijie Du; Masakazu Baba; Kaoru Toko; Kosuke O. Hara; Kentaro Watanabe; Takashi Sekiguchi; Noritaka Usami; Takashi Suemasu

doi:10.1063/1.4882117

Analysis of the electrical properties of Cr/n-BaSi₂ Schottky junction and n-BaSi₂/p-Si heterojunction diodes for solar cell applications

Weijie Du, Masakazu Baba, Kaoru Toko, Kosuke O. Hara, Kentaro Watanabe, Takashi Sekiguchi, Noritaka Usami, Takashi Suemasu

Advanced Institute for Materials Research (AIMR)

Research output: Contribution to journal › Article › peer-review

34 Citations (Scopus)

Abstract

Current status and future prospects towards BaSi₂ pn junction solar cells are presented. As a preliminary step toward the formation of BaSi₂ homojunction diodes, diodes with a Cr/n-BaSi₂ Schottky junction and an n-BaSi₂/p-Si hetero-junction have been fabricated to investigate the electrical properties of the n-BaSi₂. Clear rectifying properties were observed in the current density versus voltage characteristics in both diodes. From the capacitance-voltage measurements, the build-in potential, V_D, was 0.53V in the Cr/n-BaSi₂ Schottky junction diode, and the Schottky barrier height was 0.73eV calculated from the thermoionic emission theory; the V_D was about 1.5V in the n-BaSi₂/p-Si hetero-junction diode, which was consistent with the difference in the Fermi level between the n-BaSi₂ and the p-Si.

Original language	English
Article number	223701
Journal	Journal of Applied Physics
Volume	115
Issue number	22
DOIs	https://doi.org/10.1063/1.4882117
Publication status	Published - 2014 Jun 14

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.4882117

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Analysis of the electrical properties of Cr/n-BaSi₂ Schottky junction and n-BaSi₂/p-Si heterojunction diodes for solar cell applications. / Du, Weijie; Baba, Masakazu; Toko, Kaoru; Hara, Kosuke O.; Watanabe, Kentaro; Sekiguchi, Takashi; Usami, Noritaka; Suemasu, Takashi.

In: Journal of Applied Physics, Vol. 115, No. 22, 223701, 14.06.2014.

Research output: Contribution to journal › Article › peer-review

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title = "Analysis of the electrical properties of Cr/n-BaSi2 Schottky junction and n-BaSi2/p-Si heterojunction diodes for solar cell applications",

abstract = "Current status and future prospects towards BaSi2 pn junction solar cells are presented. As a preliminary step toward the formation of BaSi2 homojunction diodes, diodes with a Cr/n-BaSi2 Schottky junction and an n-BaSi2/p-Si hetero-junction have been fabricated to investigate the electrical properties of the n-BaSi2. Clear rectifying properties were observed in the current density versus voltage characteristics in both diodes. From the capacitance-voltage measurements, the build-in potential, VD, was 0.53V in the Cr/n-BaSi2 Schottky junction diode, and the Schottky barrier height was 0.73eV calculated from the thermoionic emission theory; the VD was about 1.5V in the n-BaSi2/p-Si hetero-junction diode, which was consistent with the difference in the Fermi level between the n-BaSi2 and the p-Si.",

author = "Weijie Du and Masakazu Baba and Kaoru Toko and Hara, {Kosuke O.} and Kentaro Watanabe and Takashi Sekiguchi and Noritaka Usami and Takashi Suemasu",

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AU - Du, Weijie

AU - Baba, Masakazu

AU - Toko, Kaoru

AU - Hara, Kosuke O.

AU - Watanabe, Kentaro

AU - Sekiguchi, Takashi

AU - Usami, Noritaka

AU - Suemasu, Takashi

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N2 - Current status and future prospects towards BaSi2 pn junction solar cells are presented. As a preliminary step toward the formation of BaSi2 homojunction diodes, diodes with a Cr/n-BaSi2 Schottky junction and an n-BaSi2/p-Si hetero-junction have been fabricated to investigate the electrical properties of the n-BaSi2. Clear rectifying properties were observed in the current density versus voltage characteristics in both diodes. From the capacitance-voltage measurements, the build-in potential, VD, was 0.53V in the Cr/n-BaSi2 Schottky junction diode, and the Schottky barrier height was 0.73eV calculated from the thermoionic emission theory; the VD was about 1.5V in the n-BaSi2/p-Si hetero-junction diode, which was consistent with the difference in the Fermi level between the n-BaSi2 and the p-Si.

AB - Current status and future prospects towards BaSi2 pn junction solar cells are presented. As a preliminary step toward the formation of BaSi2 homojunction diodes, diodes with a Cr/n-BaSi2 Schottky junction and an n-BaSi2/p-Si hetero-junction have been fabricated to investigate the electrical properties of the n-BaSi2. Clear rectifying properties were observed in the current density versus voltage characteristics in both diodes. From the capacitance-voltage measurements, the build-in potential, VD, was 0.53V in the Cr/n-BaSi2 Schottky junction diode, and the Schottky barrier height was 0.73eV calculated from the thermoionic emission theory; the VD was about 1.5V in the n-BaSi2/p-Si hetero-junction diode, which was consistent with the difference in the Fermi level between the n-BaSi2 and the p-Si.

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