Analysis of the dislocation and polarity in an AlN layer grown using Ga-Al flux

Masayoshi Adachi; Mari Takasugi; Daisuke Morikawa; Kenji Tsuda; Akikazu Tanaka; Hiroyuki Fukuyama

doi:10.1143/APEX.5.101001

Analysis of the dislocation and polarity in an AlN layer grown using Ga-Al flux

Masayoshi Adachi, Mari Takasugi, Daisuke Morikawa, Kenji Tsuda, Akikazu Tanaka, Hiroyuki Fukuyama

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

We have developed a novel liquid-phase epitaxial (LPE) technique that uses Ga-Al flux to grow AlN layers on nitrided sapphire substrates. In this study, cross-sectional and plan-view images were taken using a transmission electron microscope. An edge dislocation was dominant in the LPE AlN layers; its density was approximately 5 × 10 ⁹ cm ^-2. Convergent-beam electron diffraction analysis revealed that the LPE layer had Al polarity, even though the nitrided sapphire layer had N polarity. The oxygen potential in the injecting N2 gas played an important role in the polarity inversion in the LPE growth.

Original language	English
Article number	101001
Journal	Applied Physics Express
Volume	5
Issue number	10
DOIs	https://doi.org/10.1143/APEX.5.101001
Publication status	Published - 2012 Oct

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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abstract = "We have developed a novel liquid-phase epitaxial (LPE) technique that uses Ga-Al flux to grow AlN layers on nitrided sapphire substrates. In this study, cross-sectional and plan-view images were taken using a transmission electron microscope. An edge dislocation was dominant in the LPE AlN layers; its density was approximately 5 × 10 9 cm -2. Convergent-beam electron diffraction analysis revealed that the LPE layer had Al polarity, even though the nitrided sapphire layer had N polarity. The oxygen potential in the injecting N2 gas played an important role in the polarity inversion in the LPE growth.",

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AU - Tanaka, Akikazu

AU - Fukuyama, Hiroyuki

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N2 - We have developed a novel liquid-phase epitaxial (LPE) technique that uses Ga-Al flux to grow AlN layers on nitrided sapphire substrates. In this study, cross-sectional and plan-view images were taken using a transmission electron microscope. An edge dislocation was dominant in the LPE AlN layers; its density was approximately 5 × 10 9 cm -2. Convergent-beam electron diffraction analysis revealed that the LPE layer had Al polarity, even though the nitrided sapphire layer had N polarity. The oxygen potential in the injecting N2 gas played an important role in the polarity inversion in the LPE growth.

AB - We have developed a novel liquid-phase epitaxial (LPE) technique that uses Ga-Al flux to grow AlN layers on nitrided sapphire substrates. In this study, cross-sectional and plan-view images were taken using a transmission electron microscope. An edge dislocation was dominant in the LPE AlN layers; its density was approximately 5 × 10 9 cm -2. Convergent-beam electron diffraction analysis revealed that the LPE layer had Al polarity, even though the nitrided sapphire layer had N polarity. The oxygen potential in the injecting N2 gas played an important role in the polarity inversion in the LPE growth.

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Analysis of the dislocation and polarity in an AlN layer grown using Ga-Al flux

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