Abstract
We have developed a novel liquid-phase epitaxial (LPE) technique that uses Ga-Al flux to grow AlN layers on nitrided sapphire substrates. In this study, cross-sectional and plan-view images were taken using a transmission electron microscope. An edge dislocation was dominant in the LPE AlN layers; its density was approximately 5 × 10 9 cm -2. Convergent-beam electron diffraction analysis revealed that the LPE layer had Al polarity, even though the nitrided sapphire layer had N polarity. The oxygen potential in the injecting N2 gas played an important role in the polarity inversion in the LPE growth.
Original language | English |
---|---|
Article number | 101001 |
Journal | Applied Physics Express |
Volume | 5 |
Issue number | 10 |
DOIs | |
Publication status | Published - 2012 Oct 1 |
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)