Analysis of the dislocation and polarity in an AlN layer grown using Ga-Al flux

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Abstract

We have developed a novel liquid-phase epitaxial (LPE) technique that uses Ga-Al flux to grow AlN layers on nitrided sapphire substrates. In this study, cross-sectional and plan-view images were taken using a transmission electron microscope. An edge dislocation was dominant in the LPE AlN layers; its density was approximately 5 × 10 9 cm -2. Convergent-beam electron diffraction analysis revealed that the LPE layer had Al polarity, even though the nitrided sapphire layer had N polarity. The oxygen potential in the injecting N2 gas played an important role in the polarity inversion in the LPE growth.

Original languageEnglish
Article number101001
JournalApplied Physics Express
Volume5
Issue number10
DOIs
Publication statusPublished - 2012 Oct

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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