Analysis of the atomic structure of the Si(111)√3×√3-Bi surface by x-ray photoelectron diffraction

Chong Yun Park; Tadashi Abukawa; Kazuyuki Higashiyama; Shozo Kono

doi:10.1143/JJAP.26.L1335

Analysis of the atomic structure of the Si(111)√3×√3-Bi surface by x-ray photoelectron diffraction

Chong Yun Park, Tadashi Abukawa, Kazuyuki Higashiyama, Shozo Kono

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

It is found by X-ray photoelectron spectroscopy and LEED that the saturation coverage of Bi is one monolayer for the Si(111)√3×√3-Bi surface. Azimuthal dependence of Bi 4d photoelectron diffraction has been measured for the Si(111)√3×√3-Bi surface and analyzed kinematically. The results of the analysis have confirmed the presence of Bi-triplets with sides of 3.1 Å as proposed by X-ray diffraction. It is further found that the Bi-triplets form an overlayer on the substrate.

Original language	English
Pages (from-to)	L1335-L1337
Journal	Japanese journal of applied physics
Volume	26
Issue number	8A
DOIs	https://doi.org/10.1143/JJAP.26.L1335
Publication status	Published - 1987 Aug
Externally published	Yes

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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@article{72c632aef0c447c1b90def0e32131824,

title = "Analysis of the atomic structure of the Si(111)√3×√3-Bi surface by x-ray photoelectron diffraction",

abstract = "It is found by X-ray photoelectron spectroscopy and LEED that the saturation coverage of Bi is one monolayer for the Si(111)√3×√3-Bi surface. Azimuthal dependence of Bi 4d photoelectron diffraction has been measured for the Si(111)√3×√3-Bi surface and analyzed kinematically. The results of the analysis have confirmed the presence of Bi-triplets with sides of 3.1 {\AA} as proposed by X-ray diffraction. It is further found that the Bi-triplets form an overlayer on the substrate.",

author = "{Yun Park}, Chong and Tadashi Abukawa and Kazuyuki Higashiyama and Shozo Kono",

year = "1987",

month = aug,

doi = "10.1143/JJAP.26.L1335",

language = "English",

volume = "26",

pages = "L1335--L1337",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "8A",

}

TY - JOUR

T1 - Analysis of the atomic structure of the Si(111)√3×√3-Bi surface by x-ray photoelectron diffraction

AU - Yun Park, Chong

AU - Abukawa, Tadashi

AU - Higashiyama, Kazuyuki

AU - Kono, Shozo

PY - 1987/8

Y1 - 1987/8

N2 - It is found by X-ray photoelectron spectroscopy and LEED that the saturation coverage of Bi is one monolayer for the Si(111)√3×√3-Bi surface. Azimuthal dependence of Bi 4d photoelectron diffraction has been measured for the Si(111)√3×√3-Bi surface and analyzed kinematically. The results of the analysis have confirmed the presence of Bi-triplets with sides of 3.1 Å as proposed by X-ray diffraction. It is further found that the Bi-triplets form an overlayer on the substrate.

AB - It is found by X-ray photoelectron spectroscopy and LEED that the saturation coverage of Bi is one monolayer for the Si(111)√3×√3-Bi surface. Azimuthal dependence of Bi 4d photoelectron diffraction has been measured for the Si(111)√3×√3-Bi surface and analyzed kinematically. The results of the analysis have confirmed the presence of Bi-triplets with sides of 3.1 Å as proposed by X-ray diffraction. It is further found that the Bi-triplets form an overlayer on the substrate.

UR - http://www.scopus.com/inward/record.url?scp=84956116474&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84956116474&partnerID=8YFLogxK

U2 - 10.1143/JJAP.26.L1335

DO - 10.1143/JJAP.26.L1335

M3 - Article

AN - SCOPUS:84956116474

VL - 26

SP - L1335-L1337

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 8A

ER -