TY - JOUR
T1 - Analysis of the atomic structure of the Si(111)√3×√3-Bi surface by x-ray photoelectron diffraction
AU - Yun Park, Chong
AU - Abukawa, Tadashi
AU - Higashiyama, Kazuyuki
AU - Kono, Shozo
PY - 1987/8
Y1 - 1987/8
N2 - It is found by X-ray photoelectron spectroscopy and LEED that the saturation coverage of Bi is one monolayer for the Si(111)√3×√3-Bi surface. Azimuthal dependence of Bi 4d photoelectron diffraction has been measured for the Si(111)√3×√3-Bi surface and analyzed kinematically. The results of the analysis have confirmed the presence of Bi-triplets with sides of 3.1 Å as proposed by X-ray diffraction. It is further found that the Bi-triplets form an overlayer on the substrate.
AB - It is found by X-ray photoelectron spectroscopy and LEED that the saturation coverage of Bi is one monolayer for the Si(111)√3×√3-Bi surface. Azimuthal dependence of Bi 4d photoelectron diffraction has been measured for the Si(111)√3×√3-Bi surface and analyzed kinematically. The results of the analysis have confirmed the presence of Bi-triplets with sides of 3.1 Å as proposed by X-ray diffraction. It is further found that the Bi-triplets form an overlayer on the substrate.
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U2 - 10.1143/JJAP.26.L1335
DO - 10.1143/JJAP.26.L1335
M3 - Article
AN - SCOPUS:84956116474
VL - 26
SP - L1335-L1337
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 8A
ER -