ANALYSIS OF THE ATOMIC STRUCTURE OF THE Si(111) ROOT 3 multiplied by ROOT 3 - Bi SURFACE BY X-RAY PHOTOELECTRON DIFFRACTION.

Chong Yun Park, Tadashi Abukawa, Kazuyuki Higashiyama, Shozo Kono

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

It is found by X-ray photoelectron spectroscopy and LEED that the saturation coverage of Bi is one monolayer for the Si(111) ROOT 3 multiplied by ROOT 3-Bi surface. Azimuthal dependence of Bi 4d photoelectron diffraction has been measured for the Si(111) ROOT 3 multiplied by ROOT 3-Bi surface and analyzed kinematically. The results of the analysis have confirmed the presence of Bi-triplets with sides of 3. 1 A as proposed by X-ray diffraction. It is further found that the Bi-triplets form an overlayer on the substrate.

Original languageEnglish
Pages (from-to)1335-1337
Number of pages3
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume26
Issue number8
Publication statusPublished - 1987 Aug 1
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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