Analysis of strained island energetics in Ge/Si(001) growth

Shinya Kitamura

Research output: Contribution to journalArticlepeer-review

Abstract

The numerical calculation for Ge/Si(001) heteroepitaxial growth is performed. We adopt the most widely used Stillinger-Weber potential, and the island energies of the three types, two-dimensional island, pyramid and dome, are explored as a function of the lateral size. These island energies are compared with each other to find the island morphology which has the lowest energy. Then, a growth history of the most stable growth mode is searched. Although the result reproduces qualitatively the Stranski-Krastanov growth as observed in the experiments, quantitative differences between our result and experiments in the critical wet layer thickness and the island morphology are found.

Original languageEnglish
Article number054602
Journaljournal of the physical society of japan
Volume77
Issue number5
DOIs
Publication statusPublished - 2008 May 1

Keywords

  • Ge/Si
  • Molecular dynamics
  • Quantum dot
  • Stillinger-Weber potential
  • Strained island
  • Stranski-Krastanov growth

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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