Analysis of single-event upset of magnetic tunnel junction used in spintronic circuits caused by radiation-induced current

N. Sakimura, R. Nebashi, M. Natsui, H. Ohno, T. Sugibayashi, T. Hanyu

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

This paper describes the possibility of a switching upset of a magnetic tunnel junction (MTJ) caused by a terrestrial radiation-induced single-event-upset (SEU) current in spintronic integrated circuits. The current waveforms were simulated by using a 3-D device simulator in a basic circuit including MTJs designed using 90-nm CMOS parameters and design rules. The waveforms have a 400-μA peak and a 200-ps elapsed time when neutron particles with a linear energy transfer value of 14MeV cm2/mg enter the silicon surface. The authors also found that the SEU current may cause soft errors with a probability of more than 10-12 per event, which was obtained by approximate solution of the ordinary differential equation of switching probability when the intrinsic critical current (IC0) became less than 30 μA.

Original languageEnglish
Article number17B748
JournalJournal of Applied Physics
Volume115
Issue number17
DOIs
Publication statusPublished - 2014 May 7

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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