Analysis of RF plasma using electrical equivalent circuit

Masaki Hirayama; Kazuhide Ino; Tadahiro Ohmi

doi:10.1109/ISSM.1995.524408

Analysis of RF plasma using electrical equivalent circuit

Masaki Hirayama, Kazuhide Ino, Tadahiro Ohmi

New Industry Creation Hatchery Center (NICHe)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	1995 IEEE/UCS/SEMI International Symposium on Semiconductor Manufacturing, ISSM 1995
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	283-286
Number of pages	4
ISBN (Electronic)	0780329287, 9780780329287
DOIs	https://doi.org/10.1109/ISSM.1995.524408
Publication status	Published - 1995
Event	1995 IEEE/UCS/SEMI International Symposium on Semiconductor Manufacturing, ISSM 1995 - Austin, United States Duration: 1995 Sep 17 → 1995 Sep 19

Publication series

Name	IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings
ISSN (Print)	1523-553X

Conference

Conference	1995 IEEE/UCS/SEMI International Symposium on Semiconductor Manufacturing, ISSM 1995
Country	United States
City	Austin
Period	95/9/17 → 95/9/19

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/ISSM.1995.524408

Cite this

Hirayama, M., Ino, K., & Ohmi, T. (1995). Analysis of RF plasma using electrical equivalent circuit. In 1995 IEEE/UCS/SEMI International Symposium on Semiconductor Manufacturing, ISSM 1995 (pp. 283-286). [524408] (IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISSM.1995.524408

Analysis of RF plasma using electrical equivalent circuit. / Hirayama, Masaki; Ino, Kazuhide; Ohmi, Tadahiro.

1995 IEEE/UCS/SEMI International Symposium on Semiconductor Manufacturing, ISSM 1995. Institute of Electrical and Electronics Engineers Inc., 1995. p. 283-286 524408 (IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Hirayama, M, Ino, K & Ohmi, T 1995, Analysis of RF plasma using electrical equivalent circuit. in 1995 IEEE/UCS/SEMI International Symposium on Semiconductor Manufacturing, ISSM 1995., 524408, IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 283-286, 1995 IEEE/UCS/SEMI International Symposium on Semiconductor Manufacturing, ISSM 1995, Austin, United States, 95/9/17. https://doi.org/10.1109/ISSM.1995.524408

Hirayama M, Ino K, Ohmi T. Analysis of RF plasma using electrical equivalent circuit. In 1995 IEEE/UCS/SEMI International Symposium on Semiconductor Manufacturing, ISSM 1995. Institute of Electrical and Electronics Engineers Inc. 1995. p. 283-286. 524408. (IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings). https://doi.org/10.1109/ISSM.1995.524408

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