Analysis of resonant detection of terahertz radiation in high-electron mobility transistor with a nanostring/carbon nanotube as the mechanically floating gate

V. G. Leiman, M. Ryzhii, A. Satou, N. Ryabova, V. Ryzhii, T. Otsuji, M. S. Shur

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)

Abstract

We develop a device model for a resonant detector of electromagnetic radiation with a frequency in the terahertz (THz) range modulated by megahertz (MHz) or gigahertz (GHz) signals based on a micromachined high-electron mobility transistor (HEMT) with a metallized nanostring (NS) or metallic carbon nanotube (CNT) as mechanically the floating gate and analyze the detector operation. The device model describes both the NS/CNT mechanical motion and plasma effects in the HEMT two-dimensional electron channel. Using this model, we calculate the output gate alternating current and the detector responsivity as functions of the carrier (in the THz range) and modulation frequencies, which are in the THz and MHz (or GHz range), respectively. It is shown that the THz detector responsivity exhibits sharp and high maxima under the conditions of both mechanical and plasma resonances.

Original languageEnglish
Article number024514
JournalJournal of Applied Physics
Volume104
Issue number2
DOIs
Publication statusPublished - 2008 Aug 12

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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