Analysis of remote coulomb scattering limited mobility in MOSFETs with CeO2/La2O3 gate stacks

M. Mamatrishat, M. Kouda, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, K. Natori, T. Hattori, H. Iwai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Remote Coulomb Scattering (RCS) limited mobility in CeO2 capped La2O3 high-k MOSFETs was studied. The RCS mobility was calculated by quantum mechanical calculations. Experimental mobility data has been measured using nMOSFETs with ultrathin gate oxide with a thickness of 1.5nm, and has been compared with the calculated RCS mobility. The result shows that the mobility degradation in CeO2/La2O3 gate stack MOSFETs might be due to the RCS.

Original languageEnglish
Title of host publicationECS Transactions - ULSI Process Integration 6
Pages253-257
Number of pages5
Edition7
DOIs
Publication statusPublished - 2009
Externally publishedYes
EventULSI Process Integration 6 - 216th Meeting of the Electrochemical Society - Vienna, Austria
Duration: 2009 Oct 42009 Oct 9

Publication series

NameECS Transactions
Number7
Volume25
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherULSI Process Integration 6 - 216th Meeting of the Electrochemical Society
CountryAustria
CityVienna
Period09/10/409/10/9

ASJC Scopus subject areas

  • Engineering(all)

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