Analysis of p+ poly Si double-gate thin-film SOI MOSFETs

Tetsu Tanaka, Hirpshi Horie, Satmhi Ando, Shinpei Hijiya

Research output: Chapter in Book/Report/Conference proceedingConference contribution

54 Citations (Scopus)

Abstract

The authors have fabricated planar p+ poly Si double-gate thin-film SOI (silicon-on-insulator) nMOSFETs using wafer bonding. The fabricated devices have shown a transconductance, Gm, exceeding twice that of the single-gate SOI-MOSFET. It was confirmed that conduction in the double-gate SOI MOSFET originates from a fully flat potential and charge injection. An analytical model developed by the authors has displayed electrical characteristics that agree well with those of the fabricated devices.

Original languageEnglish
Title of host publicationInternational Electron Devices Meeting 1991, IEDM 1991
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages683-686
Number of pages4
ISBN (Electronic)0780302435
DOIs
Publication statusPublished - 1991 Jan 1
Externally publishedYes
EventInternational Electron Devices Meeting, IEDM 1991 - Washington, United States
Duration: 1991 Dec 81991 Dec 11

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume1991-January
ISSN (Print)0163-1918

Other

OtherInternational Electron Devices Meeting, IEDM 1991
CountryUnited States
CityWashington
Period91/12/891/12/11

Keywords

  • Analytical models
  • Electric variables
  • Electrodes
  • Fabrication
  • MOSFETs
  • Semiconductor thin films
  • Transconductance
  • Transistors
  • Voltage
  • Wafer bonding

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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