Analysis of program and erase operation for FC-SGT Flash memory cells

Masakazu Hioki, Tetsuo Endoh, Hiroshi Sakuraba, Markus Lenski, Fujio Masuoka

Research output: Contribution to conferencePaperpeer-review

5 Citations (Scopus)

Abstract

The floating channel type surrounding gate transistor (FC-SGT) Flash memory cell realizes high-speed bipolarity program and erase operations. In the current investigation, the time dependence of the surface potential in the floating channel region, which strongly affects program and erase performance, is studied during program and erase operation. By analyzing the carrier generation processes in floating channel region, the program and erase operation for FC-SGT Flash memory cell is made clear.

Original languageEnglish
Pages116-118
Number of pages3
Publication statusPublished - 2000 Jan 1
EventInternational Conference on Simulation of Semiconductor Processes and Devices - Seattle, WA, USA
Duration: 2000 Sep 62000 Sep 8

Other

OtherInternational Conference on Simulation of Semiconductor Processes and Devices
CitySeattle, WA, USA
Period00/9/600/9/8

ASJC Scopus subject areas

  • Engineering(all)

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