TY - JOUR
T1 - Analysis of possible deformation mechanisms in helium-ion irradiated SiC
AU - Nogami, S.
AU - Ohtsuka, S.
AU - Toloczko, M. B.
AU - Hasegawa, A.
AU - Abe, K.
N1 - Funding Information:
The authors are grateful to the staff of Information Synergy Center at Tohoku University for maintaining their super computer and work stations. This work was partly supported by the JUPITER (Japan–USA Program of Irradiation Testing for Fusion Research) program. This work was also partly supported by the Japan Nuclear Cycle Development Institute.
Copyright:
Copyright 2004 Elsevier Science B.V., Amsterdam. All rights reserved.
PY - 2002/12
Y1 - 2002/12
N2 - Possible modes of accommodating deformation during physically constrained swelling of SiC during He-ion irradiation (∼2 × 1022 He/m2 below 200 °C) were studied using finite element modeling. When accommodating deformation occurs only by elastic deformation, calculated internal stresses are much higher than the fracture stress for SiC. On the other hand, stresses below the fracture stress result when allowing irradiation-enhanced creep (IEC) to act as an additional accommodation mechanism. For a steady-state IEC compliance coefficient for SiC equal to 6 × 10-5 MPa-1 dpa-1, the maximum observed von Mises stress was less than the fracture stress of the material. This value for the creep compliance appears to be significantly larger than the few experimentally available measured values for crystalline SiC in the open literature.
AB - Possible modes of accommodating deformation during physically constrained swelling of SiC during He-ion irradiation (∼2 × 1022 He/m2 below 200 °C) were studied using finite element modeling. When accommodating deformation occurs only by elastic deformation, calculated internal stresses are much higher than the fracture stress for SiC. On the other hand, stresses below the fracture stress result when allowing irradiation-enhanced creep (IEC) to act as an additional accommodation mechanism. For a steady-state IEC compliance coefficient for SiC equal to 6 × 10-5 MPa-1 dpa-1, the maximum observed von Mises stress was less than the fracture stress of the material. This value for the creep compliance appears to be significantly larger than the few experimentally available measured values for crystalline SiC in the open literature.
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U2 - 10.1016/S0022-3115(02)01058-9
DO - 10.1016/S0022-3115(02)01058-9
M3 - Article
AN - SCOPUS:0036947911
VL - 307-311
SP - 1178
EP - 1182
JO - Journal of Nuclear Materials
JF - Journal of Nuclear Materials
SN - 0022-3115
IS - 2 SUPPL.
ER -