TY - GEN
T1 - Analysis of patterned magnetic thin-film noise suppressor for RF IC chip
AU - Yamaguchi, Masahiro
AU - Endo, Yasushi
AU - Fan, Peng
AU - Ma, Jingyan
AU - Tanaka, Satoshi
AU - Miyazawa, Yasunori
AU - Nagata, Makoto
N1 - Funding Information:
This work was supported in part by Development of Technical Examination Services Concerning Frequency Crowding, MIC, Japan, Creation of innovation centers for advanced interdisciplinary research areas Program, MEXT, Japan, and RIEC Cooperative Research Project Tohoku University.
Funding Information:
The authors thank Prof. Emer. Y. Shimada (Tohoku Univ.), Prof. S. Muroga (Nat. ColI. Tech. Toyota Inst.) and Dr. T. Ito (NEC Tokin Co., currently) for their valuable collaboration. This work was supported by Development of Technical Examination Services Concerning Frequency Crowding, MIC, Japan.
Publisher Copyright:
© 2017 IEEE.
PY - 2017/7/31
Y1 - 2017/7/31
N2 - Noise coupling path on a fully LTE-compatible receiver circuit chain (Band1, 2110-2170 MHz for downlink) has been analyzed to estimate the victim wires that carry digital noise from RF digital to analogue circuits on the test RF IC chip, three noise-carrying wire groups were extracted out of numerous on-chip wires through systematic measurements and electromagnetic simulation. Then the patterned amorphous Co-Zr-Nb film was integrated only along the extracted wire groups on the test chip. Measured noise level and LTE throughput performance clarified lower in-band spurious tone (noise) by 9.3 dB as compared with the non-magnetic original chip, and also better than non-patterned magnetic film by 7.3 dB. These results and EM simulation made sure the noise coupling path on chip, and suggesting the noise diffusion in the original larger film blocks.
AB - Noise coupling path on a fully LTE-compatible receiver circuit chain (Band1, 2110-2170 MHz for downlink) has been analyzed to estimate the victim wires that carry digital noise from RF digital to analogue circuits on the test RF IC chip, three noise-carrying wire groups were extracted out of numerous on-chip wires through systematic measurements and electromagnetic simulation. Then the patterned amorphous Co-Zr-Nb film was integrated only along the extracted wire groups on the test chip. Measured noise level and LTE throughput performance clarified lower in-band spurious tone (noise) by 9.3 dB as compared with the non-magnetic original chip, and also better than non-patterned magnetic film by 7.3 dB. These results and EM simulation made sure the noise coupling path on chip, and suggesting the noise diffusion in the original larger film blocks.
KW - RF IC
KW - conduction noise
KW - digital noise
KW - magnetic thin film
KW - noise suppressor
KW - wireless communication
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U2 - 10.1109/EMCCompo.2017.7998079
DO - 10.1109/EMCCompo.2017.7998079
M3 - Conference contribution
AN - SCOPUS:85028506633
T3 - Proceedings of the 2017 11th International Workshop on the Electromagnetic Compatibility of Integrated Circuits, EMCCompo 2017
SP - 45
EP - 49
BT - Proceedings of the 2017 11th International Workshop on the Electromagnetic Compatibility of Integrated Circuits, EMCCompo 2017
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 11th International Workshop on the Electromagnetic Compatibility of Integrated Circuits, EMCCompo 2017
Y2 - 4 July 2017 through 8 July 2017
ER -