Analysis of MBE growth mode for GaN epilayers by RHEED

Hajime Okumura, Krishnan Balakrishnan, Hiroshi Hamaguchi, Takayoshi Koizumi, Shigefusa Chichibu, Hisayuki Nakanishi, Takao Nagatomo, Sadafumi Yoshida

Research output: Contribution to journalArticle

54 Citations (Scopus)

Abstract

The growth mode of hexagonal GaN epilayers on sapphire(0 0 0 1) surfaces during N2 plasma-assisted molecular beam epitaxy was investigated using in situ reflection high-energy electron diffraction technique. It was found that the Ga-rich condition results in a flat surface showing streak patterns rather than the N-rich condition, and the intensities of the diffraction spots show behaviors that are different for Ga-rich and N-rich conditions. For the specular spot, oscillation-like intensity variations were observed according to the supply of Ga flux, which depends on Ga flux intensity and substrate temperature. At the lower temperature region, the growth of cubic GaN was observed with its [1 1 1] crystal axis along the normal direction of the sapphire(0 0 0 1) surface.

Original languageEnglish
Pages (from-to)364-369
Number of pages6
JournalJournal of Crystal Growth
Volume189-190
DOIs
Publication statusPublished - 1998 Jun 15
Externally publishedYes

Keywords

  • Cubic
  • GaN
  • Growth mode
  • Growth monitoring
  • Hexagonal
  • Oscillation
  • RHEED
  • Structure control

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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  • Cite this

    Okumura, H., Balakrishnan, K., Hamaguchi, H., Koizumi, T., Chichibu, S., Nakanishi, H., Nagatomo, T., & Yoshida, S. (1998). Analysis of MBE growth mode for GaN epilayers by RHEED. Journal of Crystal Growth, 189-190, 364-369. https://doi.org/10.1016/S0022-0248(98)00313-3