Analysis of low-frequency noise in organic field-effect transistors combining static and noise data

Y. Xu, F. Balestra, J. A. Chroboczek, G. Ghibaudo, T. Minari, K. Tsukagoshi, R. Gwoziecki, R. Coppard

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

A study of electrical properties of organic transistors combining static and noise data is presented. The DC data provide key parameters, such as mobility, contact resistance and the surface state density. The low-frequency noise analysis proves that the features observed in DC measurements, e.g. higher trap density, reflect poor crystal quality and thus are responsible for lower mobility and higher contact resistance. The mobility and contact resistance data provide a deep insight into the origin of the contact noise in organic transistors.

Original languageEnglish
Title of host publicationProceedings of the IEEE 21st International Conference on Noise and Fluctuations, ICNF 2011
Pages57-60
Number of pages4
DOIs
Publication statusPublished - 2011 Sep 19
Externally publishedYes
Event21st International Conference on Noise and Fluctuations, ICNF 2011 - Toronto, ON, Canada
Duration: 2011 Jun 122011 Jun 16

Publication series

NameProceedings of the IEEE 21st International Conference on Noise and Fluctuations, ICNF 2011

Conference

Conference21st International Conference on Noise and Fluctuations, ICNF 2011
CountryCanada
CityToronto, ON
Period11/6/1211/6/16

Keywords

  • DC
  • Low-frequency noise
  • organic transistors

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Analysis of low-frequency noise in organic field-effect transistors combining static and noise data'. Together they form a unique fingerprint.

Cite this