Analysis of linear energy transfer effects on the scintillation properties of Bi4Ge3O12 crystals

Masanori Koshimizu, Satoshi Kurashima, Atsushi Kimura, Mitsumasa Taguchi, Takayuki Yanagida, Yutaka Fujimoto, Keisuke Asai

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

We analyzed the linear energy transfer (LET; energy deposited onto the target per unit length) effects on the scintillation properties of Bi4Ge3O12 (BGO) with an emphasis on the dynamical aspect. We irradiated BGO with 20 MeV H±, 50 MeV He±, and 220 MeV C5+. We observed that the rise and the decay of the scintillation temporal profiles are faster at higher LET. The faster decay at higher LET is attributed to the competition between the radiative transition of self-trapped excitons (STEs) localized at Bi3+ ions and the quenching caused by the interaction between STEs. The faster rise can be explained in terms of the competition between the quenching caused by the interaction between excited states and the formation of the STEs.

Original languageEnglish
Pages (from-to)19-22
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume409
DOIs
Publication statusPublished - 2017 Oct 15

Keywords

  • BGO
  • Excitation density
  • Linear energy transfer
  • Quench
  • Scintillator

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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