We report surface-induced optical anisotropy spectra of high-index Si(115), (114), and (113) surfaces obtained using reflectance difference spectroscopy. Air-oxidized surfaces show sharp derivative-type features that are step-induced and located near the critical point energies of bulk Si, consistent with those of lower-index Si(001) surfaces. Clean reconstructed surfaces are characterized by a broad feature near 3 eV that tends to decrease in amplitude upon H exposure and a step-induced structure near the (E′0,E1) transition of bulk Si. In contrast, H exposure of Ge-covered surfaces tends to sharpen and enhance lower-energy structures. The derivative-type features located near the bulk critical point energies of Si can be described in terms of electronic states localized by the finite penetration depth of light.
|Number of pages||5|
|Journal||Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films|
|Publication status||Published - 1999 Jan 1|
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films