Analysis of high-index Si(001) surfaces by reflectance difference spectroscopy

L. Mantese, Q. K. Xue, T. Sakurai, D. E. Aspnes

    Research output: Contribution to journalArticlepeer-review

    4 Citations (Scopus)

    Abstract

    We report surface-induced optical anisotropy spectra of high-index Si(115), (114), and (113) surfaces obtained using reflectance difference spectroscopy. Air-oxidized surfaces show sharp derivative-type features that are step-induced and located near the critical point energies of bulk Si, consistent with those of lower-index Si(001) surfaces. Clean reconstructed surfaces are characterized by a broad feature near 3 eV that tends to decrease in amplitude upon H exposure and a step-induced structure near the (E′0,E1) transition of bulk Si. In contrast, H exposure of Ge-covered surfaces tends to sharpen and enhance lower-energy structures. The derivative-type features located near the bulk critical point energies of Si can be described in terms of electronic states localized by the finite penetration depth of light.

    Original languageEnglish
    Pages (from-to)1652-1656
    Number of pages5
    JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
    Volume17
    Issue number4
    DOIs
    Publication statusPublished - 1999 Jan 1

    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Surfaces and Interfaces
    • Surfaces, Coatings and Films

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