@inproceedings{6679050440f24703a97d854887537c90,
title = "Analysis of growth velocity of SiC growth by the physical vapor transport method",
abstract = "Crystal growth velocity of SiC in a process of physical vapor transport was studied on the basis of numerical calculation including the effect of compressibility, convection and buoyancy effects, flow coupling between argon gas and species of Si, Si2C and SiC2, and the Stefan effect. Calculation in a 2D configuration was performed to clarify the effect of pressure on growth velocity. The results revealed that convection plays a role in the measured values that growers interpret as growth velocity based on a diffusion process of argon gas and species of Si, Si2C and SiC 2.",
keywords = "Computer simulation, Growth from vapor, Heat transfer, Substrate",
author = "Koichi Kakimoto and Bing Gao and Takuya Shiramomo and Satoshi Nakano and Nishizawa, {Shin Ichi}",
year = "2012",
doi = "10.4028/www.scientific.net/MSF.717-720.25",
language = "English",
isbn = "9783037854198",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "25--28",
editor = "Devaty, {Robert P.} and Michael Dudley and Chow, {T. Paul} and Neudeck, {Philip G.}",
booktitle = "Silicon Carbide and Related Materials 2011, ICSCRM 2011",
note = "14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011 ; Conference date: 11-09-2011 Through 16-09-2011",
}