Analysis of growth rate of silicon nanowires

J. Kikkawa, Yutaka Ohno, S. Takeda

Research output: Contribution to journalConference article

Abstract

We have measured the growth rate of silicon nanowires (SiNWs) in the diameter range of 3 to 40 nm (8.4 nm on average), which were grown by chemical vapor deposition (CVD) at temperatures between 365°C and 495°C. It is found that SiNWs with smaller diameters grow slower than those with larger ones, and a critical diameter at which growth stops completely exists. The growth rate of the thinner SiNWs stronger depends on growth temperature than that of thicker ones in previous studies. We discuss the dependence by thermodynamics theory.

Original languageEnglish
Article numberF7.25
Pages (from-to)347-352
Number of pages6
JournalMaterials Research Society Symposium Proceedings
Volume832
Publication statusPublished - 2005 Aug 25
Externally publishedYes
Event2004 MRS Fall Meeting - Boston, MA, United States
Duration: 2004 Nov 292004 Dec 2

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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