Analysis of gate delay scaling in In0.7Ga0.3As- channel high electron mobility transistors

Shunsuke Fukuda, Tetsuya Suemitsu, Taiichi Otsuji, Dae Hyun Kim, Jesús A. Del Alamo

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

The intrinsic and the parasitic gate delay of In0.7Ga 0.3-channel high electron mobility transistors (HEMTs) are analyzed. In this paper, we extract the intrinsic parameters of sub-100-nm gate pseudomorphic InGaAs channel HEMTs and estimate the intrinsic and parasitic gate delay. We discuss how the intrinsic and parasitic gate delay are affected by scaling of the gate length and we estimate the parasitic gate capacitance from this gate delay analysis. We also compare the result of the gate delay analysis with lattice-matched InGaAs-channel HEMTs to examine the effect of use of the pseudomorphic InGaAs channel in the gate delay.

Original languageEnglish
Article number04C086
JournalJapanese journal of applied physics
Volume48
Issue number4 PART 2
DOIs
Publication statusPublished - 2009 Apr 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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