Analysis of gain-switching characteristics including strong gain saturation effects in low-dimensional semiconductor lasers

Shaoqiang Chen, Masahiro Yoshita, Takashi Ito, Toshimitsu Mochizuki, Hidefumi Akiyama, Hiroyuki Yokoyama, Kenji Kamide, Tetsuo Ogawa

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

The effects of gain nonlinearities on gain-switched short-pulse-generation characteristics are analyzed via rate equations assuming a nonlineargain model including a gain saturation parameter gs to quantitatively describe the strong gain-saturation nonlinearity in low-dimensional semiconductor lasers at high carrier densities. It was found that the minimum pulse width and the delay time are mainly determined by g s rather than a differential gain coefficient g 0 and a gain compression factor ε. By tracing the temporal evolution of carrier density, photon density, and material gain during gain switching, distinctly different effects of g s, ε, and cavity lifetime τ p on pulse generation were clarified.

Original languageEnglish
Article number098001
JournalJapanese journal of applied physics
Volume51
Issue number9
DOIs
Publication statusPublished - 2012 Sep 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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