Analysis of gain and luminescence in violet and blue GaInN - GaN quantum wells

Bernd Witzigmann, Marco Tomamichel, Sebastian Steiger, Ratko G. Veprek, Kazunobu Kojima, Ulrich T. Schwarz

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)


In this paper, gain in GaInN quantum wells with 8% and 19% indium is analyzed using a comparison of a microscopic model to experimental data. It is shown that localized valence states can explain the characteristics of the gain spectra, in particular the broadening features at the red side of the spectrum. From an analysis of experimental and simulation data, the nonradiative current component is extracted, and is shown to dominate the total current density at laser threshold operation. The increase of nonradiative current with density explains the drop in internal quantum efficiency in GaInN light-emitting diodes.

Original languageEnglish
Pages (from-to)144-149
Number of pages6
JournalIEEE Journal of Quantum Electronics
Issue number2
Publication statusPublished - 2008 Feb
Externally publishedYes


  • Gain
  • Gallium-nitride
  • LED
  • Laser
  • Simulation

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


Dive into the research topics of 'Analysis of gain and luminescence in violet and blue GaInN - GaN quantum wells'. Together they form a unique fingerprint.

Cite this