Analysis of formation process of ferroelectric domain structure in PZT thin films by in-situ TEM

Takanori Kiguchi, Naoki Wakiya, Kazuo Shinozaki, Nobuyasu Mizutani

Research output: Contribution to journalConference article

2 Citations (Scopus)

Abstract

Pb(Zrx,Til-x)O3 (PZT) thin films (Zr/Ti=0.2/0.8) were deposited on the (001) SrTiO3 single crystal substrates by PLD method. The ferroelectric-ferroelastic 90° domain structure formation process was examined in real time by in-situ heating TEM method. The 90° domain contrast weakened with heating, and disappeared about 470°C. The shape of the 90° domains were almost not changed till they have disappeared. In the 90° domain formation cooling process, the a-domain appeared at the same locus, in the same shape and configuration before the in-situ TEM experiment.

Original languageEnglish
Pages (from-to)203-206
Number of pages4
JournalKey Engineering Materials
Volume228-229
Publication statusPublished - 2002 Jan 1
Externally publishedYes
EventAsian Ceramic Science for Electronics II Proceedings of the 2nd Asian Meeting of Electroceramics - Kawasaki, Japan
Duration: 2001 Oct 12001 Oct 1

Keywords

  • 90° Domain
  • Domain Formation
  • Domain Walls
  • HRTEM
  • In Situ TEM
  • PZT
  • Thin Film

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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