Analysis of formation process of ferroelectric domain structure in PZT thin films by in-situ TEM

Takanori Kiguchi; Naoki Wakiya; Kazuo Shinozaki; Nobuyasu Mizutani

Analysis of formation process of ferroelectric domain structure in PZT thin films by in-situ TEM

Takanori Kiguchi, Naoki Wakiya, Kazuo Shinozaki, Nobuyasu Mizutani

Research output: Contribution to journal › Conference article › peer-review

Abstract

Pb(Zrx,Til-x)O₃ (PZT) thin films (Zr/Ti=0.2/0.8) were deposited on the (001) SrTiO₃ single crystal substrates by PLD method. The ferroelectric-ferroelastic 90° domain structure formation process was examined in real time by in-situ heating TEM method. The 90° domain contrast weakened with heating, and disappeared about 470°C. The shape of the 90° domains were almost not changed till they have disappeared. In the 90° domain formation cooling process, the a-domain appeared at the same locus, in the same shape and configuration before the in-situ TEM experiment.

Original language	English
Pages (from-to)	203-206
Number of pages	4
Journal	Key Engineering Materials
Volume	228-229
Publication status	Published - 2002 Jan 1
Externally published	Yes
Event	Asian Ceramic Science for Electronics II Proceedings of the 2nd Asian Meeting of Electroceramics - Kawasaki, Japan Duration: 2001 Oct 1 → 2001 Oct 1

Keywords

90° Domain
Domain Formation
Domain Walls
HRTEM
In Situ TEM
PZT
Thin Film

ASJC Scopus subject areas

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

Cite this

@article{b1b7acca1c3241cfb5650f0796e55207,

title = "Analysis of formation process of ferroelectric domain structure in PZT thin films by in-situ TEM",

abstract = "Pb(Zrx,Til-x)O3 (PZT) thin films (Zr/Ti=0.2/0.8) were deposited on the (001) SrTiO3 single crystal substrates by PLD method. The ferroelectric-ferroelastic 90° domain structure formation process was examined in real time by in-situ heating TEM method. The 90° domain contrast weakened with heating, and disappeared about 470°C. The shape of the 90° domains were almost not changed till they have disappeared. In the 90° domain formation cooling process, the a-domain appeared at the same locus, in the same shape and configuration before the in-situ TEM experiment.",

keywords = "90° Domain, Domain Formation, Domain Walls, HRTEM, In Situ TEM, PZT, Thin Film",

author = "Takanori Kiguchi and Naoki Wakiya and Kazuo Shinozaki and Nobuyasu Mizutani",

year = "2002",

month = jan,

day = "1",

language = "English",

volume = "228-229",

pages = "203--206",

journal = "Key Engineering Materials",

issn = "1013-9826",

publisher = "Trans Tech Publications",

note = "Asian Ceramic Science for Electronics II Proceedings of the 2nd Asian Meeting of Electroceramics ; Conference date: 01-10-2001 Through 01-10-2001",

}

TY - JOUR

T1 - Analysis of formation process of ferroelectric domain structure in PZT thin films by in-situ TEM

AU - Kiguchi, Takanori

AU - Wakiya, Naoki

AU - Shinozaki, Kazuo

AU - Mizutani, Nobuyasu

PY - 2002/1/1

Y1 - 2002/1/1

N2 - Pb(Zrx,Til-x)O3 (PZT) thin films (Zr/Ti=0.2/0.8) were deposited on the (001) SrTiO3 single crystal substrates by PLD method. The ferroelectric-ferroelastic 90° domain structure formation process was examined in real time by in-situ heating TEM method. The 90° domain contrast weakened with heating, and disappeared about 470°C. The shape of the 90° domains were almost not changed till they have disappeared. In the 90° domain formation cooling process, the a-domain appeared at the same locus, in the same shape and configuration before the in-situ TEM experiment.

AB - Pb(Zrx,Til-x)O3 (PZT) thin films (Zr/Ti=0.2/0.8) were deposited on the (001) SrTiO3 single crystal substrates by PLD method. The ferroelectric-ferroelastic 90° domain structure formation process was examined in real time by in-situ heating TEM method. The 90° domain contrast weakened with heating, and disappeared about 470°C. The shape of the 90° domains were almost not changed till they have disappeared. In the 90° domain formation cooling process, the a-domain appeared at the same locus, in the same shape and configuration before the in-situ TEM experiment.

KW - 90° Domain

KW - Domain Formation

KW - Domain Walls

KW - HRTEM

KW - In Situ TEM

KW - PZT

KW - Thin Film

UR - http://www.scopus.com/inward/record.url?scp=0036432342&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036432342&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0036432342

VL - 228-229

SP - 203

EP - 206

JO - Key Engineering Materials

JF - Key Engineering Materials

SN - 1013-9826

T2 - Asian Ceramic Science for Electronics II Proceedings of the 2nd Asian Meeting of Electroceramics

Y2 - 1 October 2001 through 1 October 2001

ER -

Analysis of formation process of ferroelectric domain structure in PZT thin films by in-situ TEM

Abstract

Keywords

ASJC Scopus subject areas

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