Abstract
Pb(Zrx,Til-x)O3 (PZT) thin films (Zr/Ti=0.2/0.8) were deposited on the (001) SrTiO3 single crystal substrates by PLD method. The ferroelectric-ferroelastic 90° domain structure formation process was examined in real time by in-situ heating TEM method. The 90° domain contrast weakened with heating, and disappeared about 470°C. The shape of the 90° domains were almost not changed till they have disappeared. In the 90° domain formation cooling process, the a-domain appeared at the same locus, in the same shape and configuration before the in-situ TEM experiment.
| Original language | English |
|---|---|
| Pages (from-to) | 203-206 |
| Number of pages | 4 |
| Journal | Key Engineering Materials |
| Volume | 228-229 |
| Publication status | Published - 2002 Jan 1 |
| Externally published | Yes |
| Event | Asian Ceramic Science for Electronics II Proceedings of the 2nd Asian Meeting of Electroceramics - Kawasaki, Japan Duration: 2001 Oct 1 → 2001 Oct 1 |
Keywords
- 90° Domain
- Domain Formation
- Domain Walls
- HRTEM
- In Situ TEM
- PZT
- Thin Film
ASJC Scopus subject areas
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering
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Cite this
Kiguchi, T., Wakiya, N., Shinozaki, K., & Mizutani, N. (2002). Analysis of formation process of ferroelectric domain structure in PZT thin films by in-situ TEM. Key Engineering Materials, 228-229, 203-206.