TY - JOUR
T1 - Analysis of drivability enhancement factors in nanograting metal-oxide-semiconductor field-effect transistors
AU - Zhu, Xiaoli
AU - Kuroki, Shin Ichiro
AU - Kotani, Koji
AU - Fukuda, Masatoshi
AU - Shido, Hideharu
AU - Mishima, Yasuyoshi
AU - Ito, Takashi
PY - 2008/4/25
Y1 - 2008/4/25
N2 - The enhancement factors of a new structure called the nanograting metal-oxide-semiconductor field-effect transistor (MOSFET), which was proposed to achieve higher current drivability, were analyzed. From the measurement of the transconductance, the drivability enhancements of both n- and p-type MOSFETs were confirmed. This was mainly ascribed to the increased effective channel width. However, the enhancement ratios in nMOS and pMOS were different. In the nanograting MOSFETs, the existence of the current flowing in the (110) direction on the (110) surface caused the effective electron mobility to be lower and the effective hole mobility to be higher than that in the conventional devices on the (100) surface. The stress from the polycrystalline silicon (poly-Si) gate also resulted in the change of the mobility. Because of the reasons above, the mobility difference between the nanograting nMOSFET and pMOSFET became slighter, thus, the area balance of the nanograting complementary MOS (CMOS) circuit could be improved. Combining this with the increased drivability could give the area advantage of the nanograting CMOSFETs.
AB - The enhancement factors of a new structure called the nanograting metal-oxide-semiconductor field-effect transistor (MOSFET), which was proposed to achieve higher current drivability, were analyzed. From the measurement of the transconductance, the drivability enhancements of both n- and p-type MOSFETs were confirmed. This was mainly ascribed to the increased effective channel width. However, the enhancement ratios in nMOS and pMOS were different. In the nanograting MOSFETs, the existence of the current flowing in the (110) direction on the (110) surface caused the effective electron mobility to be lower and the effective hole mobility to be higher than that in the conventional devices on the (100) surface. The stress from the polycrystalline silicon (poly-Si) gate also resulted in the change of the mobility. Because of the reasons above, the mobility difference between the nanograting nMOSFET and pMOSFET became slighter, thus, the area balance of the nanograting complementary MOS (CMOS) circuit could be improved. Combining this with the increased drivability could give the area advantage of the nanograting CMOSFETs.
KW - Area advantage
KW - Drivability
KW - Effective mobility
KW - Nanograting MOSFET
KW - Stress
UR - http://www.scopus.com/inward/record.url?scp=54249095169&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=54249095169&partnerID=8YFLogxK
U2 - 10.1143/JJAP.47.3081
DO - 10.1143/JJAP.47.3081
M3 - Article
AN - SCOPUS:54249095169
VL - 47
SP - 3081
EP - 3085
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 4 PART 2
ER -