Analysis of dopant diffusion and defect evolution during sub-millisecond non-melt laser annealing based on an atomistic kinetic Monte Carlo approach

T. Noda, W. Vandervorst, S. Felch, V. Parihar, C. Vrancken, S. Severi, A. Falepin, T. Janssens, H. Bender, B. Van Daele, P. Eyben, M. Niwa, R. Schreutelkamp, F. Nouri, P. P. Absil, M. Jurczak, K. De Meyer, S. Biesemans

Research output: Chapter in Book/Report/Conference proceedingConference contribution

48 Citations (Scopus)

Abstract

Sub-millisecond (ms) non-melt laser annealing (NLA) is investigated through experiments and atomistic KMC modeling. NLA can improve the dopant activation dramatically and achieve shallow junctions. B diffusivity during sub-ms annealing is discussed for the first time. Our KMC model with F nVm, complexes indicates that the thermal budget of sub-ms annealing is too small for full defect evolution and one possible solution for defect stabilization is F co-implant.

Original languageEnglish
Title of host publication2006 International Electron Devices Meeting Technical Digest, IEDM
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)1424404398, 9781424404391
DOIs
Publication statusPublished - 2006 Jan 1
Externally publishedYes
Event2006 International Electron Devices Meeting, IEDM - San Francisco, CA, United States
Duration: 2006 Dec 102006 Dec 13

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other2006 International Electron Devices Meeting, IEDM
CountryUnited States
CitySan Francisco, CA
Period06/12/1006/12/13

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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    Noda, T., Vandervorst, W., Felch, S., Parihar, V., Vrancken, C., Severi, S., Falepin, A., Janssens, T., Bender, H., Van Daele, B., Eyben, P., Niwa, M., Schreutelkamp, R., Nouri, F., Absil, P. P., Jurczak, M., De Meyer, K., & Biesemans, S. (2006). Analysis of dopant diffusion and defect evolution during sub-millisecond non-melt laser annealing based on an atomistic kinetic Monte Carlo approach. In 2006 International Electron Devices Meeting Technical Digest, IEDM [4154208] (Technical Digest - International Electron Devices Meeting, IEDM). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2006.346789