Analysis of dopant diffusion and defect evolution during sub-millisecond non-melt laser annealing based on an atomistic kinetic Monte Carlo approach

T. Noda; W. Vandervorst; S. Felch; V. Parihar; C. Vrancken; S. Severi; A. Falepin; T. Janssens; H. Bender; B. Van Daele; P. Eyben; M. Niwa; R. Schreutelkamp; F. Nouri; P. P. Absil; M. Jurczak; K. De Meyer; S. Biesemans

doi:10.1109/IEDM.2006.346789

Analysis of dopant diffusion and defect evolution during sub-millisecond non-melt laser annealing based on an atomistic kinetic Monte Carlo approach

T. Noda, W. Vandervorst, S. Felch, V. Parihar, C. Vrancken, S. Severi, A. Falepin, T. Janssens, H. Bender, B. Van Daele, P. Eyben, M. Niwa, R. Schreutelkamp, F. Nouri, P. P. Absil, M. Jurczak, K. De Meyer, S. Biesemans

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

48 Citations (Scopus)

Abstract

Sub-millisecond (ms) non-melt laser annealing (NLA) is investigated through experiments and atomistic KMC modeling. NLA can improve the dopant activation dramatically and achieve shallow junctions. B diffusivity during sub-ms annealing is discussed for the first time. Our KMC model with F _nV_m, complexes indicates that the thermal budget of sub-ms annealing is too small for full defect evolution and one possible solution for defect stabilization is F co-implant.

Original language	English
Title of host publication	2006 International Electron Devices Meeting Technical Digest, IEDM
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Print)	1424404398, 9781424404391
DOIs	https://doi.org/10.1109/IEDM.2006.346789
Publication status	Published - 2006 Jan 1
Externally published	Yes
Event	2006 International Electron Devices Meeting, IEDM - San Francisco, CA, United States Duration: 2006 Dec 10 → 2006 Dec 13

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Other

Other	2006 International Electron Devices Meeting, IEDM
Country	United States
City	San Francisco, CA
Period	06/12/10 → 06/12/13

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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Noda, T., Vandervorst, W., Felch, S., Parihar, V., Vrancken, C., Severi, S., Falepin, A., Janssens, T., Bender, H., Van Daele, B., Eyben, P., Niwa, M., Schreutelkamp, R., Nouri, F., Absil, P. P., Jurczak, M., De Meyer, K., & Biesemans, S. (2006). Analysis of dopant diffusion and defect evolution during sub-millisecond non-melt laser annealing based on an atomistic kinetic Monte Carlo approach. In 2006 International Electron Devices Meeting Technical Digest, IEDM [4154208] (Technical Digest - International Electron Devices Meeting, IEDM). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2006.346789

Analysis of dopant diffusion and defect evolution during sub-millisecond non-melt laser annealing based on an atomistic kinetic Monte Carlo approach. / Noda, T.; Vandervorst, W.; Felch, S.; Parihar, V.; Vrancken, C.; Severi, S.; Falepin, A.; Janssens, T.; Bender, H.; Van Daele, B.; Eyben, P.; Niwa, M.; Schreutelkamp, R.; Nouri, F.; Absil, P. P.; Jurczak, M.; De Meyer, K.; Biesemans, S.

2006 International Electron Devices Meeting Technical Digest, IEDM. Institute of Electrical and Electronics Engineers Inc., 2006. 4154208 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Noda, T, Vandervorst, W, Felch, S, Parihar, V, Vrancken, C, Severi, S, Falepin, A, Janssens, T, Bender, H, Van Daele, B, Eyben, P, Niwa, M, Schreutelkamp, R, Nouri, F, Absil, PP, Jurczak, M, De Meyer, K & Biesemans, S 2006, Analysis of dopant diffusion and defect evolution during sub-millisecond non-melt laser annealing based on an atomistic kinetic Monte Carlo approach. in 2006 International Electron Devices Meeting Technical Digest, IEDM., 4154208, Technical Digest - International Electron Devices Meeting, IEDM, Institute of Electrical and Electronics Engineers Inc., 2006 International Electron Devices Meeting, IEDM, San Francisco, CA, United States, 06/12/10. https://doi.org/10.1109/IEDM.2006.346789

Noda T, Vandervorst W, Felch S, Parihar V, Vrancken C, Severi S et al. Analysis of dopant diffusion and defect evolution during sub-millisecond non-melt laser annealing based on an atomistic kinetic Monte Carlo approach. In 2006 International Electron Devices Meeting Technical Digest, IEDM. Institute of Electrical and Electronics Engineers Inc. 2006. 4154208. (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2006.346789

Noda, T. ; Vandervorst, W. ; Felch, S. ; Parihar, V. ; Vrancken, C. ; Severi, S. ; Falepin, A. ; Janssens, T. ; Bender, H. ; Van Daele, B. ; Eyben, P. ; Niwa, M. ; Schreutelkamp, R. ; Nouri, F. ; Absil, P. P. ; Jurczak, M. ; De Meyer, K. ; Biesemans, S. / Analysis of dopant diffusion and defect evolution during sub-millisecond non-melt laser annealing based on an atomistic kinetic Monte Carlo approach. 2006 International Electron Devices Meeting Technical Digest, IEDM. Institute of Electrical and Electronics Engineers Inc., 2006. (Technical Digest - International Electron Devices Meeting, IEDM).

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abstract = "Sub-millisecond (ms) non-melt laser annealing (NLA) is investigated through experiments and atomistic KMC modeling. NLA can improve the dopant activation dramatically and achieve shallow junctions. B diffusivity during sub-ms annealing is discussed for the first time. Our KMC model with F nVm, complexes indicates that the thermal budget of sub-ms annealing is too small for full defect evolution and one possible solution for defect stabilization is F co-implant.",

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