Analysis of dielectric constant of a self-forming barrier layer with Cu-Mn alloy on TEOS- Si O2

S. M. Chung, J. Koike

Research output: Contribution to journalArticlepeer-review

30 Citations (Scopus)

Abstract

A Cu-Mn alloy film was deposited on Si O2 to self-form a diffusion barrier layer of Mn Ox at their interface. Transmission electron microscopy revealed that the barrier layer was formed not on the Cu alloy side but on the Si O2 side. Capacitance-voltage measurement revealed the decrease in the dielectric constant of the barrier layer from 11.4 to 5.1 with increasing annealing temperature. The obtained results indicated that the self-forming barrier layer with Cu-Mn is an excellent barrier layer without posing any negative influences on the interconnect line resistance and on the insulator capacitance.

Original languageEnglish
Pages (from-to)L28-L31
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume27
Issue number5
DOIs
Publication statusPublished - 2009 Oct 12

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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